In a particular semiconductor device, electrons that are accelerated through a potential of 5 V attempt to tunnel through a barrier of width 0.8 nm and height 10 V. What fraction of the electrons are able to tunnel through the barrier if the potential is zero outside the barrier?
In a particular semiconductor device, electrons that are accelerated through a potential of 5 V attempt to tunnel through a barrier of width 0.8 nm and height 10 V. What fraction of the electrons are able to tunnel through the barrier if the potential is zero outside the barrier?
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In a particular semiconductor device, electrons that are accelerated through a potential of 5 V attempt to tunnel through a barrier of width 0.8 nm and height 10 V. What fraction of the electrons are able to tunnel through the barrier if the potential is zero outside the barrier?
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