In an n-type silicon sample, the donor concentration at 300 K is 5 x 1014/cm3 that corresponds to 1 impurity atom for 1018 silicon atoms. The electron and hole concentration in the sample will be: [Assume n₁ = 1.45 x 1010/cm³]

In an n-type silicon sample, the donor concentration at 300 K is 5 x 1014/cm3 that corresponds to 1 impurity atom for 1018 silicon atoms. The electron and hole concentration in the sample will be: [Assume n₁ = 1.45 x 1010/cm³]

Delmar's Standard Textbook Of Electricity

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ISBN:9781337900348

Author:Stephen L. Herman

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Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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Question

In an n-type silicon sample, the donor concentration at 300 K is 5 x
1014/cm3 that corresponds to 1 impurity atom for 1018 silicon atoms.
The electron and hole concentration in the sample will be:
[Assume n₁ = 1.45 x 1010/cm³]

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