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In Fig. 35.15, the d.c. level of Ig is (tran- sistor is of silicon) B = 90 %3D RB 240 k2 RE 2 k2 VEE = -20V Fig. 35.15 (i) 45.73 mA (ii) 22.68 mA (iii) 57.62 mA. (iv) 28.73 mA ww

In Fig. 35.15, the d.c. level of Ig is (tran- sistor is of silicon) B = 90 %3D RB 240 k2 RE 2 k2 VEE = -20V Fig. 35.15 (i) 45.73 mA (ii) 22.68 mA (iii) 57.62 mA. (iv) 28.73 mA ww

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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In Fig. 35.15, the d.c. level of I is (tran- sistor is of silicon) B B = 90 %3D RB 240 k2 RE32 k2 VEE = -20V Fig. 35.15 (i) 45.73 mA (ii) 22.68 mA (iii) 57.62 mA (iv) 28.73 mA ww
Transcribed Image Text:In Fig. 35.15, the d.c. level of I is (tran- sistor is of silicon) B B = 90 %3D RB 240 k2 RE32 k2 VEE = -20V Fig. 35.15 (i) 45.73 mA (ii) 22.68 mA (iii) 57.62 mA (iv) 28.73 mA ww
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