In the figure below the absorption coefficient of silicon (Si), GaAs and InP is depicted. 10 105 10 InP 10 GaAs 10 10 104 Band gaps 100 200 800 1000 1200 1400 1600 1800 2000 400 600 Wavelength (nm) A) How thick should a GaAs layer be to be able to absorb 63.2% of the light (that enters the layer) in one pass at a wavelength of 480 nm. Give the answer in [nm]. B) To absorb 63.2% of the light (that enters the layer) in one pass at a wavelength of 480 nm, by what factor should the thickness of the GaAs layer be multiplied if the absorber layer is now made of crystalline silicon. Absorption coefficient (cm) L IL LL

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In the figure below the absorption coefficient of silicon (Si), GaAs and InP is depicted.
10
105
10
InP
10
GaAs
10
10
104
Band gaps
100
200
800 1000 1200 1400 1600 1800 2000
400
600
Wavelength (nm)
A) How thick should a GaAs layer be to be able to absorb 63.2% of the light (that enters the layer) in one pass
at a wavelength of 480 nm. Give the answer in [nm].
B) To absorb 63.2% of the light (that enters the layer) in one pass at a wavelength of 480 nm, by what factor
should the thickness of the GaAs layer be multiplied if the absorber layer is now made of crystalline silicon.
Absorption coefficient (cm)
L IL LL
Transcribed Image Text:In the figure below the absorption coefficient of silicon (Si), GaAs and InP is depicted. 10 105 10 InP 10 GaAs 10 10 104 Band gaps 100 200 800 1000 1200 1400 1600 1800 2000 400 600 Wavelength (nm) A) How thick should a GaAs layer be to be able to absorb 63.2% of the light (that enters the layer) in one pass at a wavelength of 480 nm. Give the answer in [nm]. B) To absorb 63.2% of the light (that enters the layer) in one pass at a wavelength of 480 nm, by what factor should the thickness of the GaAs layer be multiplied if the absorber layer is now made of crystalline silicon. Absorption coefficient (cm) L IL LL
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