metal wires silicon frame cantilever doped piezoresistor silicon frame A fixed-free cantilever is made of single-crystal silicon. The resistor is made by diffusion doping, with a Gauge factor of 100. The length, width, and thickness of the cantilever are 100µm, 20µm, and 5um respectively. If a force F=10 µN is applied at the end of the cantilever as illustrated in the figure what would be the percentage change of resistance? The Young's modulus of silicon of the resistor is 130 GPa.

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Chapter9: Heat Transfer With Phase Change
Section: Chapter Questions
Problem 9.12P
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metal wires
silicon
frame
cantilever
doped piezoresistor
silicon
frame
A fixed-free cantilever is made of single-crystal silicon. The resistor is made by diffusion doping, with a Gauge factor of 100. The length, width, and thickness of the cantilever are 100µm,
20µm, and 5um respectively. If a force F=10 µN is applied at the end of the cantilever as illustrated in the figure what would be the percentage change of resistance?
The Young's modulus of silicon of the resistor is 130 GPa.
Transcribed Image Text:metal wires silicon frame cantilever doped piezoresistor silicon frame A fixed-free cantilever is made of single-crystal silicon. The resistor is made by diffusion doping, with a Gauge factor of 100. The length, width, and thickness of the cantilever are 100µm, 20µm, and 5um respectively. If a force F=10 µN is applied at the end of the cantilever as illustrated in the figure what would be the percentage change of resistance? The Young's modulus of silicon of the resistor is 130 GPa.
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