npn silicon the voltage dívider me thod. the being bigsed divider metho. A transistor ís using Circuit details VCC = 1S V: B=265, VBE =0,65 V RBI %3D %3D %3D 10,3K RB2 =1K8, RC=57OS %3D 1242 %3D D Calculate the 9froSs 1he Emiter 2 (alculate fhe the transistor voltagelin V) developed resistor, RC in (mW) distipst Power ipstc by e Calculate the (mA) flowing through the colleltor resistor RC' Colleltor Current C in

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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silicon transistor
using the voltage
Circuit details
ís beinz biased
dívider method.the
npn
そて
VCc = 1S V
RBI :
B=265, VBE = 0,65 V ; Refat D
16, 3K
RE = 124 3s.
%3D
RB2 =IK8, RC=57o su
D Calculate the
afross the emiteY
volHagelin V) developed
resistor, RC.
in (mW) distipsted
(alculate the
the transistor
by
3 Calculate the
power
Colleltor Current C in
(mA) flowing through the colleitor
YとSistor
RC
Transcribed Image Text:silicon transistor using the voltage Circuit details ís beinz biased dívider method.the npn そて VCc = 1S V RBI : B=265, VBE = 0,65 V ; Refat D 16, 3K RE = 124 3s. %3D RB2 =IK8, RC=57o su D Calculate the afross the emiteY volHagelin V) developed resistor, RC. in (mW) distipsted (alculate the the transistor by 3 Calculate the power Colleltor Current C in (mA) flowing through the colleitor YとSistor RC
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