o+15 V 250k 2.2k 22k C 1815 A. an increase in current gain causes an increase in а. Ic b. VCE c. IB d. Vcc B. When an Re increases in base-biased circuit, which of this increases? a. le b. VBB c. Ic d. Vce C. When Rc increases in a base-biased circuit, which of these decreases? а. Iв b. VBB c. lc d. VCE

o+15 V 250k 2.2k 22k C 1815 A. an increase in current gain causes an increase in а. Ic b. VCE c. IB d. Vcc B. When an Re increases in base-biased circuit, which of this increases? a. le b. VBB c. Ic d. Vce C. When Rc increases in a base-biased circuit, which of these decreases? а. Iв b. VBB c. lc d. VCE

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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For the transistor , IS = 4 × 10−16 μA,βF = 75, and βR = 4. (a) Label the collector, base,and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, and label the normal direction for IE , IC, and IB. (d) Write the simplified formof the transport model equations that apply to thisparticular circuit configuration. Write an expressionfor IE /IB. Write an expression for IE /IC. (e) Findthe values of IE , IC, IB, VC B, and VE B.
If VT =2V, K= 0.4mA/V^2 , Vdd =5V, Rd =Rs =1K for the n-channel MOSFET given in the figure, what is the voltage value of Vgs?
4--In the given circuit, n MOSFETs are used.Q1, Q2,….. Parameters of Qn MOS transistors Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1=(W/L)2=….=(W/L)n=20a) VGS=?, ID=?, gm=?b) Find the input and output impedance.c) Find the voltage gain.
For the transistor , IS = 6 × 10−16 μA, βF = 100, and βR = 0.25. (a) Labelthe collector, base, and emitter terminals of thetransistor. (b) What is the transistor type? (c) Labelthe base-emitter and base-collector voltages, VBEand VBC, and the normal directions for IE , IC, andIB. (d) Find the values of IE , IC, IB, VBC, and VBEif I = 175 μA.
Suppose that we have an unusual type of FET for which iD=3 exp(vGS)+0.01vDS2 Here, iD is in mA, vGS is in volts, and vDS is in volts. Determine the values of gm and rd for a Q point of VGSQ=1 V and VDSQ = 10 V.
The switches as shown can be implemented using MOSFETs, as shown. What must be the W/L ratios of the transistors if the onresistance of the transistor is to be less than 1 percent of the resistor 2R = 12 kΩ? Use VREF = 3.0V. Assume that the voltage applied to the gate of the MOSFET is 5Vwhen b1 = 1 and 0Vwhen b1 = 0. For the MOSFET, VTN = 1 V, Kn = 50 μA/V2, 2φF = 0.6 V, and γ = 0.5√V.
3) If IDSS = 8 mA and VP = - 6 V in the circuit with JFET transistors given below, calculate the current and voltage values of ID , VDS , VGS, VS, VDG and VD. (R1 = 910 KΩ, R2 = 220 KΩ, RD = 2.2KΩ, Rss = 1.2 KΩ, VDD = 18 V)
A base biased transistor circuit with the following element values is given VBB = 10V, VCC = 10V, RB = 470kΩ +/- 5%, RC = 820Ω, β = 100. Find the max and min values of base current. Type your equations and results ..
The transistor is specified to have Bf in the range of 7 to 35. The load resistance is Rc = 9 ohms. The dc supply voltage is Vcc = 180V and the input voltage to the base circuit is VB = 8V. If VCE (Sat) = 1,1 V and VBE (sat) = 1,6, determine: The value of RB that results in an ODF of 4 A. 0,7514 ohm B 0,5634 ohm C. 0,5081ohm D. 1 ohm The Power loss in the Transistor A. 35,07 W B. 44,30 W c. 40,04 W D. 23,65 W
For the transistors in this question, use |Vt| = 0.1V, |VA| = 10V, kn,p = 12.5mA/V2. The signal source has 0.1 mV amplitude and 1 kHz frequency. Calculate Rout, Gm and Av for the circuits separately ?
FOLLOW UP QUESTIONS: BIPOLAR JUNCTION TRANSISTOR (BJT) SOLVE FOR: a.) VCE (off) CONSTRUCT A DC LINE SHOWING THE VALUES OF b.) IC (sat) c.) VCE (off) d.) ICQ e.) VCEQ
A certain NMOS transistor has vGS(t) =2 V vDS(t) =5+2 sin(ωt) V iD(t) =3+0.01 sin(ωt) mA Which small-signal parameter (gm or rd) can be determined from this information? What is its value? For what Q point (VGSQ, IDQ and VDSQ) does this parameter apply?