Part I: Amplifier Specifications. • Use no more than three 2N3904 transistors. • The overall amplifier gain should be at least A, = +50 • Input signal should be Vpp = 10mV pp –200mVppat 1kHz • Your circuit load R1 = 5.1kN. • The input resistance, Rin( = Rin(tot)) > 10kN. • The output resistance, Rout < 1k. • Vcc s 20 volts The output voltage, Vout is not inverted from the input voltage, Vin.

Part I: Amplifier Specifications. • Use no more than three 2N3904 transistors. • The overall amplifier gain should be at least A, = +50 • Input signal should be Vpp = 10mV pp –200mVppat 1kHz • Your circuit load R1 = 5.1kN. • The input resistance, Rin( = Rin(tot)) > 10kN. • The output resistance, Rout < 1k. • Vcc s 20 volts The output voltage, Vout is not inverted from the input voltage, Vin.

EBK ELECTRICAL WIRING RESIDENTIAL

19th Edition

ISBN:9781337516549

Author:Simmons

Publisher:Simmons

Chapter25: Television, Telephone, And Low-voltage Signal Systems

Section25.1: Television Circuit

Problem 5R: From a cost standpoint, which system is more economical to install: a master amplifier distribution...

See similar textbooks

Similar questions

In the common-emitter amplifier circuit shown in the figure, Vcc=9V, R1=27kΩ, R2=15kΩ, RE=1.2kΩ and RC=2.2kΩ. The transistor has β=100.a-) If Rsig=10kΩ and RL=2kΩ, calculate the IE value of the amplifier.b-) For small signal analysis of the transistor, find the value of Rin by deriving the π-modelc-) Calculate vo/vsig and io/ii.
Please help with the following questions, thank you, they are all based on the same diagram. 1) What is the input resistance to the circuit? 2) What is the output resistance of the circuit is? 3) What is the gain of this amplifier circuit ? 4) What is the advantage of this circuit configuration is? Thank you.
A common-source amplifier with a drain resistance, RD = 4.7 k Ω, is powered using a10 V power supply. Assuming that the transconductance, gm, is 520 μA/V, the voltage gain of the amplifier is closest to:
Design a Single-Stage Common Emitter Class A Amplifier Specifications:Voltage Divider Bias Circuit Supply: Any value from 10Vdc to 24VdcLoad: 1kΩVoltage Gain: Any value from 80 to 400Lower Cutoff Frequency: 100 HzSinusoidal source (zero internal resistance): 50mVp-pTransistor: Si, β = 75 • Base-Collector capacitance = 8pF • Base-Emitter Capacitance = 25pF a) compute for the biasing resistances.b) determine the dc transistor terminal voltages and transistor currents.
a. In AC, how are the capacitors treated? b. In AC, how are DC sources treated? c. What is the amplifier configuration of Figure 4? d. What is the expected phase shift of the sinusoidal input at the output side? e. What is Zi across RG, the gate resistor? f. It is the IC in its smallest form. g. The most commonly used metal as interconnect of the chip to external peipheral. h. How is pin 1 of the chip determined? i. An IC package similar to a DIP but with the pins bent outward. j. Which sensors are packed as IC?
Consider the common-source amplifier shown in Figure P11.50. The NMOS transistor has KP=50 μA/V2, L=5 μm, W=500 μm, Vto=1 V and rd=∞.a. Determine the values of IDQ, VDSQ and gm. b. Compute the voltage gain, input resistance, and output resistance, assuming that the coupling capacitors are short circuits for the ac signal. Repeat Problem P11.50 for an NMOS transistor having KP=50 μA/V2, W=600 μm, L=20 μm, Vto=2 V and rd=∞. Compare the gain with that attained in Problem P11.50.
Amplifier circuit is show below has a single ac input and one ac output. Assuming 2N2222 transistor: 1- Determine the Q point, then illustrate it on the transistor I-V characteristic curves. 2- Is the transistor in the active region? Explain thoroughly. 3- Construct the T-model of the transistor with all parameters labelled and evaluated. Assume room temperature. 4- Draw a complete small signal circuit model, then find the voltage gain. Explain two characteristics of this amplifier. 5- Calculate the current gain, the input resistance, and the output resistance.
Since the transistors used in the circuit are B=100, ro=∞ a) Find the re1, re2 resistance values by performing the DC analysis for each amplifier stage separately. b) Draw the AC equivalent circuit of the amplifier circuit. c)Find the input and output impedance values for each amplifier stage. d) Find the voltage gains AV1, AV2 for each amplifier stage. e) Find the voltage value VL by finding the AV1 Voltage gain.
If the circuit of problem 2 is configured as a common-emitter amplifier, calculate the resulting voltage and current gain. Assume a load resistor of 1k ohm. Circuit of problem 2: determine the operating point of a universal trasnsistor DC bias cirucit when Vcc=15V, R1=10k ohm, R2=2.2k ohm, Rc=680 ohm, Re=100 ohm. Assume beta (b)=200 and Vbe=0.72V.
The ac equivalent circuit for an amplifier is shown. Assume the capacitors have infinite value, RI = 100 kΩ, RG = 6.8MΩ, RD = 50 kΩ, and R3 = 120 kΩ. Calculate the voltage gain for the amplifier if the MOSFET Q-point is (100 μA, 5 V). Assume Kn = 450 μA/V2 and λ = 0.02 V−1.
Question 1: Draw and explain the transistor amplifier, which is usually referred as emitter follower.Also, (i) derive its voltage and current gains by equivalent circuit; (ii) compare its voltage and current gains with other transistor amplifiers. Question 2:(a) Predict the name of the curve drawn between ID and VGS of the JFET and represent the cut off voltage in it. (b) E-MOSFET has ID(on) = 600mA (minimum) at VGS = 9V and VGS(th) = 1 V. Find the drain current for VGS = 6 V. Question 3: (a) State the name of the power amplifier, which has a efficiency as 10% in practical case and also derive and prove its theoretical efficiency is 25%. (b) Explain the role of Q point in power amplifiers based on its location in AC load line.…
What are the unity-gain frequency and slew rate of the bipolar amplifier as shown if I1 = 100 μA, I2 = 400 μA, and CC = 10 pF? (b) If I1 = 300 μA, I2 = 350 μA, and CC = 10 pF?