Problems QI: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If H,=0.14 m²/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm)
Problems QI: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If H,=0.14 m²/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm)
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Problems
Ql: A bar of intrinsic silicon having a cross section area of
3x104 m² has an n=1.5x1016m3. If µ=0.14 m2/V.s and u,-0.05
m2/V.s. Find the long of the bar if the current is 1.2mA and the
applied voltage is 9V.
(Ans: 1.026mm)
Q2: Calculate the thermal equilibrium electron and hole
concentration in silicon at T=300K for the case when the Fermi
energy level is 0.22 eV below the conduction band energy. Eg=
1.12 eV. The values of Ne and N, are 2.8x1025/m³ and
1.04x1025/m', respectively.
(Ans: n=5.73x102²/m², p-8.43x10%m³)
Q3: Find the intrinsic carrier concentration in silicon at (a)
T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m
and 1.04x1025/m', respectively.
(Ans: (a) 7.68x1010/m², (b) 2.38×1018/m³)
Q4: Determine the position of the intrinsic Fermi level with
respect to the center of the bandgap in GaAs at T=300K.
mn=0.067 mo, m,=0.48 mo
(Ans: -38.2meV)
II
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