Q1) Design the bias of MOSFET such that the Q-point is in middle of saturation region. Assume Vtn =lv, kn=1ma/v, clm factor=0.015 and ri=(R1||R2) =100k .design the circuit such that Idq =2ma and Q-point is in the middle of the saturation region. VDD = 12 V Rp RI ID=2 mA o vo Cc R2 ww www

Q1) Design the bias of MOSFET such that the Q-point is in middle of saturation region. Assume Vtn =lv, kn=1ma/v, clm factor=0.015 and ri=(R1||R2) =100k .design the circuit such that Idq =2ma and Q-point is in the middle of the saturation region. VDD = 12 V Rp RI ID=2 mA o vo Cc R2 ww www

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Question

Q1) Design the bias of MOSFET such that the Q-point is in middle of saturation region.
Assume Vtn =1v, kn=1ma/v, clm factor=0.015 and ri=(R1||R2) =100k .design the circuit
such that Idq =2ma and Q-point is in the middle of the saturation region.
VDD = 12 V
Rp2
ID=2 mA
Ovo
Cc
ww

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