Q1/ Fill in the blanks with the correct answer. 1. The net drift current is got from the movement of the both 2. The units of drift current density is and 3. The velocity characteristics of the particle is affected by and 4. There are two collision or scattering mechanisms that dominate in a semiconductor and affect the carrier mobility: and 5. Mobility that is due to lattice scattering increases as the temperature decreases due to 6. In the lower temperature range, freeze-out begins to occur; the electron concentration and conductivity decrease with decreasing temperature due to devices. and 10-3 cm). 9. Consider a piece semiconductor the geometrical parameters (L= 0.1 cm, W = 0.1 cm, and d = Also assume the Hall effect parameters that Ix = 1.0 mA, V = 2.5 V, B₂ = 500 gauss 5 x 10-2 tesla, and VH = 6.25 mV, then the majority carrier type is 7. The semiconductors that have negative resistance be useful in the 8. There are a two mechanisms, that can induce a current in a semiconductor, 10. Ambipolar Transport is 11. Assume that excess carriers have been generated uniformly in a semiconductor to a concentration of Sn (0) = 1015 cm-3. The forcing function generating the excess carriers turns off at time t = 0. Assuming the excess carrier lifetime is Tno = 10-6, determine dn(t) for t = 2 sec. Then the excess carriers is about -3 cm ........
Q1/ Fill in the blanks with the correct answer. 1. The net drift current is got from the movement of the both 2. The units of drift current density is and 3. The velocity characteristics of the particle is affected by and 4. There are two collision or scattering mechanisms that dominate in a semiconductor and affect the carrier mobility: and 5. Mobility that is due to lattice scattering increases as the temperature decreases due to 6. In the lower temperature range, freeze-out begins to occur; the electron concentration and conductivity decrease with decreasing temperature due to devices. and 10-3 cm). 9. Consider a piece semiconductor the geometrical parameters (L= 0.1 cm, W = 0.1 cm, and d = Also assume the Hall effect parameters that Ix = 1.0 mA, V = 2.5 V, B₂ = 500 gauss 5 x 10-2 tesla, and VH = 6.25 mV, then the majority carrier type is 7. The semiconductors that have negative resistance be useful in the 8. There are a two mechanisms, that can induce a current in a semiconductor, 10. Ambipolar Transport is 11. Assume that excess carriers have been generated uniformly in a semiconductor to a concentration of Sn (0) = 1015 cm-3. The forcing function generating the excess carriers turns off at time t = 0. Assuming the excess carrier lifetime is Tno = 10-6, determine dn(t) for t = 2 sec. Then the excess carriers is about -3 cm ........
Glencoe Physics: Principles and Problems, Student Edition
1st Edition
ISBN:9780078807213
Author:Paul W. Zitzewitz
Publisher:Paul W. Zitzewitz
Chapter29: Solid-state Electronics
Section29.1: Conduction In Solids
Problem 25SSC
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Transcribed Image Text:Q1/ Fill in the blanks with the correct answer.
1. The net drift current is got from the movement of the both
2. The units of drift current density is
and
3. The velocity characteristics of the particle is affected by
and
4. There are two collision or scattering mechanisms that dominate in a semiconductor and affect the carrier
mobility:
and
5. Mobility that is due to lattice scattering increases as the temperature decreases due to
6.
In the lower temperature range, freeze-out begins to occur; the electron concentration and conductivity
decrease with decreasing temperature due to
7. The semiconductors that have negative resistance be useful in the
8. There are a two mechanisms, that can induce a current in a semiconductor,
devices.
and
9. Consider a piece semiconductor the geometrical parameters (L= 0.1 cm, W = 0.1 cm, and d = 10-³ cm).
Also assume the Hall effect parameters that Ix 1.0 mA, V = 2.5 V, B₂ = 500 gauss 5 x 10-2 tesla,
and VH = 6.25 mV, then the majority carrier type is
=
10. Ambipolar Transport is
11. Assume that excess carriers have been generated uniformly in a semiconductor to a concentration of Sn (0) =
1015 cm-3. The forcing function generating the excess carriers turns off at time t =
carrier lifetime is Tno =
0. Assuming the excess
10-6, determine dn(t) for t = 2 sec. Then the excess carriers is about
cm-3
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