Q2. The circuit below uses current- (or shunt-) feedback bias. The Si transistor has ICEO and hfe (B) = 100. If Rc is, location of the quiescent point such that VCEQ =Vcc/2. (2) - 0, VCEsat = = 2k and Vcc = 12 V, design Rf for ideal maximum symmetrical swing (that Rc Rp 0 Rs is RL Us R R.

Q2. The circuit below uses current- (or shunt-) feedback bias. The Si transistor has ICEO and hfe (B) = 100. If Rc is, location of the quiescent point such that VCEQ =Vcc/2. (2) - 0, VCEsat = = 2k and Vcc = 12 V, design Rf for ideal maximum symmetrical swing (that Rc Rp 0 Rs is RL Us R R.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter12: Power System Controls

Section: Chapter Questions

Problem 12.3P

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Question

Si transistor has ICEO = 0, B = 100, Rc=2kQ, Vcc=12 V. Assume that; (VCEQ = Vcc /2). The circuit of Figure below uses current- (or shunt-) feedback bias. The +Vcc find RC Cc 1. The value of IgQ RF 2. The value of RF lic Rs VL RL Cc R. R;

Q2. The circuit below uses current- (or shunt-) feedback bias. The Si transistor has Iceo 0, VCEsat =
, and hff (B) = 100. If Rc = 2kN and Vcc = 12 V, design Rp for ideal maximum symmetrical swing (that
is, location of the quiescent point such that Vceq = Vcc/2. (2)
+Vc
SRC
Cc
6
RE
4
ig
R1
US
R,
R,

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