Q3A pnp transistor is manufactured such that PEmitter >> nbase >> Pcollector. The base regioncharacteristics are: Nd = 1015 /cm³, A = 103 cm?, WB = 1 µm, Dp = 10 cm?/s, ni = 1010 /cm³.Calculate:a/emitter current (lE) at VEB = 0.65 v.b/voltage gain (Av), given that RL = 1kN, a = 0.95.%3D

PEmitter >>nbase >>pcollector Nd=1015cm3 A=10-3cm2 WB=1µm DP=10cm2s ni=1010cm3

Q3 A pnp transistor is manufactured such that pemitter » Nbase >> Pcollector. The base region characteristics are: Na = 1015 /cm³, A = 103 cm?, WB = 1 µm, Dp = 10 cm?/s, n; = 1010 /cm³. Calculate: a/ b/ emitter current (le) at VeB = 0.65 v. voltage gain (Av), given that RL = 1k2, a = 0.95.

Q3 A pnp transistor is manufactured such that pemitter » Nbase >> Pcollector. The base region characteristics are: Na = 1015 /cm³, A = 103 cm?, WB = 1 µm, Dp = 10 cm?/s, n; = 1010 /cm³. Calculate: a/ b/ emitter current (le) at VeB = 0.65 v. voltage gain (Av), given that RL = 1k2, a = 0.95.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Q3
A pnp transistor is manufactured such that PEmitter >> nbase >> Pcollector. The base region
characteristics are: Nd = 1015 /cm³, A = 103 cm?, WB = 1 µm, Dp = 10 cm?/s, ni = 1010 /cm³.
Calculate:
a/
emitter current (lE) at VEB = 0.65 v.
b/
voltage gain (Av), given that RL = 1kN, a = 0.95.
%3D

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