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- Elaborate the following with Scientific Reason a. Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors b. Elaborate the concept and importance of Majority Carriers and Minority Carriers inside P-N Junction c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?Explain why Silicon and Germanium are the most common semiconductor materials used in Electronics Devices? Give/Enumerate other semiconductor materials except Silicon and Germanium? Explain why they are not used in Electronics Devices. Explain why Covalent Bonding is used in bonding of semiconductor materials. Explain why Semiconductors are Negative Temperature Coefficient materials?Which of the following statements is false? A. We can create an extrinsic semiconductor materials by adding impurities to an intrinsic semiconductors. B. A pentavalent impurity addition to an intrinsic semiconductor gives N-type semiconductor. C. N-type semiconductor has more holes than the free electrons that contribute to the conduction of current. D. The P-type semiconductors have more holes than the free electrons.
- Discuss the method of increase the conductivity of intrinsic semiconductor and how it works?a) With the aid of illustrations and using Silicon, describe what an intrinsic semiconductor material is. (b) With the aid of illustrations and using Silicon, describe what an extrinsic N type semiconductor material is. (c) With the aid of illustrations and using Silicon, describe what an extrinsic P type semiconductor material is. (d) With the aid of illustrations, describe what happens when P and N materials are joined/fused together and what is formed across the join. Then describe and illustrate how the formation at the junction can be controlled. (e) Give clear illustrations of characteristics for GERMANIUM and SILICON DIODES and say what is the threshold value (Vt) for Silicon and Germanium.For intrinsic semiconductors, the concentration of intrinsic carriers ni depends on the temperature of theas follows:Thus, a graph of (ln ni) as a function of 1 / T (K) –1 must be linear and have a slope of (-Ee / 2k). Explain,succinctly, the reason for the presence of factor 2 in the denominator of Equation 1.
- A. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.In a silicon semiconductor, aluminum material is added. a) What are the majority and minority charge carriers in the resultant semiconductor? b) Why is the resultant semiconductor still electrically neutral?Explain what is meant by the intrinsic regime of a doped semiconductor, and whether this behaviour is seen for all temperatures.