With regard ton-type extrinsic semiconductors, which one of the following explanations is not correct? O a. Maximum "extrinsic" conductivity is reached when all the extra electrons are ionized. O b. The temperature interval where the maximum extrinsic conductivity is reached is called as "Extrinsic (or depleted) region". O c. At high temperatures, it can show "intrinsic" behavior. O d. Additional conductivity can be obtained if the thermal energy is increased. O e. An acceptor state is created close to valance band.
With regard ton-type extrinsic semiconductors, which one of the following explanations is not correct? O a. Maximum "extrinsic" conductivity is reached when all the extra electrons are ionized. O b. The temperature interval where the maximum extrinsic conductivity is reached is called as "Extrinsic (or depleted) region". O c. At high temperatures, it can show "intrinsic" behavior. O d. Additional conductivity can be obtained if the thermal energy is increased. O e. An acceptor state is created close to valance band.
Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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With regard to the n-type extrinsic semiconductors, which one of the following explanations is not correct?
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