Question 3.14a. For the common-emitter characteristics of Fig. 3.14, determine the dc beta at a point of VCE= +8V and IC= 2mA operation. Determine the value of a corresponding to this operating point.b. At VCE= +8V, determine the corresponding value of ICEO.c. Calculate the approximate value of ICBO with the dc beta value obtained in part (a). lc (mA)890 μΑ80 µA770 µA60 HAla (HA)VcE =1 VVCr = 10 V100 ERegión de saturación 550 µA90 FVCE = 20 V40 μΑ80 F70 F30 uA60ERegión activa50 F20 µA40 F30 E10 uA12010Ig =0 uA20 VCE (V)10150.20.40.60.81.0VRE (V)Región de corte(a)(b)FIG. 3.14Características de un transistor de silicio en la configuración en emisor común: (a) características; (b) caracteristicas de base.3.

Answered: Question 3.14 a. For the…

Introductory Circuit Analysis (13th Edition)

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ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

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Question 3.14

a. For the common-emitter characteristics of Fig. 3.14, determine the dc beta at a point of VCE= +8V and IC= 2mA operation. Determine the value of a corresponding to this operating point.
b. At VCE= +8V, determine the corresponding value of ICEO.
c. Calculate the approximate value of ICBO with the dc beta value obtained in part (a).

lc (mA)
8
90 μΑ
80 µA
7
70 µA
60 HA
la (HA)
VcE =1 V
VCr = 10 V
100 E
Región de saturación 5
50 µA
90 F
VCE = 20 V
40 μΑ
80 F
70 F
30 uA
60E
Región activa
50 F
20 µA
40 F
30 E
10 uA
1
20
10
Ig =0 uA
20 VCE (V)
10
15
0.2
0.4
0.6
0.8
1.0
VRE (V)
Región de corte
(a)
(b)
FIG. 3.14
Características de un transistor de silicio en la configuración en emisor común: (a) características; (b) caracteristicas de base.
3.

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