QUESTION 9: Find the change in load current with a change in collector voltage in a Widlar current source. The parameters for the Widlar current source in the following figure are R1 = 9.3 kN, Rg= 10.75 k2, and Io = 11.4 µA. Let ß = 85 and V4= 80 V. Calculate the change in Io as change in Vc2 = 1.3 V. ro2 (MQ) Format : 4.0565 Em2 (mA/V) Format : 0.7822 n2 (kN) Format : 773.9699 Ro (MQ) Format : 78.5957 dlo (HA) Format : 0.0285 Percent change in Io (%) Format : 0.8274

QUESTION 9: Find the change in load current with a change in collector voltage in a Widlar current source. The parameters for the Widlar current source in the following figure are R1 = 9.3 kN, Rg= 10.75 k2, and Io = 11.4 µA. Let ß = 85 and V4= 80 V. Calculate the change in Io as change in Vc2 = 1.3 V. ro2 (MQ) Format : 4.0565 Em2 (mA/V) Format : 0.7822 n2 (kN) Format : 773.9699 Ro (MQ) Format : 78.5957 dlo (HA) Format : 0.0285 Percent change in Io (%) Format : 0.8274

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

Q3:Choose One of the following: : (A)In common emmiter voltage divider bias of BJT, Vcc = 25V; R1= 10 k ohm; R2, = 2.2 k ohm ;Rc = 3.6 k ohm and RE = 1 k ohm.Determain Vec at ß = 120.using Exact analysis Draw the equvelent circuit inaddition the DC load line curve . (B)For self bais(Emitter resistace bais) of BJT,Vcc= 22 V, lb = 45macroA, a = 0.99, RE = 1 k ohm. Determain VCe Draw the equvelent circuit inaddition to DC load line curve.
Question 1: Draw and explain the transistor amplifier, which is usually referred as emitter follower.Also, (i) derive its voltage and current gains by equivalent circuit; (ii) compare its voltage and current gains with other transistor amplifiers. Question 2:(a) Predict the name of the curve drawn between ID and VGS of the JFET and represent the cut off voltage in it. (b) E-MOSFET has ID(on) = 600mA (minimum) at VGS = 9V and VGS(th) = 1 V. Find the drain current for VGS = 6 V. Question 3: (a) State the name of the power amplifier, which has a efficiency as 10% in practical case and also derive and prove its theoretical efficiency is 25%. (b) Explain the role of Q point in power amplifiers based on its location in AC load line.…
A resistive load of 4 ohms is matched to the collector impedance of an amplifier by means of a transformer having a turn ratio of 40:1. The amplifier uses a DC supply voltage of 12V in the absence of input signal. When signal is present at the base, the collector voltage swings between 22V and 2V, while the collector current swings between 0.9A and 0.05A. Determine: (a) the collector impedance (b) Signal power output (c) DC power input (d) Collector efficiency
In the circuit in the figure IDSS = 12 mA, VP = -8 V, VGSQ = -2.4 V, IDQ = 4.12 mA, Rsig = 10 kΩ, RG = 100 kΩ, RD = 2 kΩ, RS = 470 Ω, RL = 23.7 kΩ and it is known that rd = 20 kΩ. What will be the voltage gain of the circuit? NOTE: The FET output impedance is rd = 20 kΩ and must be taken into account in the calculations.
Estimate the output voltage of a 80W,PV module when it is short circuited? a. 0V b. equal to its Voc value c. less than its Voc value d. more than its Voc value Clear my choice
in the circuit given in the figure , VDD = 20 V ,Rs= 1 kohm , VGSQ= -2.6 v, IDQ = 2.6 mA.the transistor specifically has values of IDSS = 8mA , Vp= -6 V , and gos =25 µS. what should be the RD resistance for the output voltage to be -24.85 mV when an AC voltage of 12 mV is applied to the transistor input ? Options: a) 3.3 kohm b) 4.2 kohm c) 4.5 kohm d) 3.6 kohm e) 3.9 kohm
What is the output voltage for the circuit diagram given below? For VGS(on) = 4.5V , ID(on)=75mA , RDS(on) = 6ohm
1.)Draw the diagram /circuit equivalent of 4 transistor Q1, Q2, Q3 & Q4. Connect it to form A.) Diac circuit B.) Triac circuit
question from book ELECTRONIC CIRCUIT DESIGN : Question No. 2 Analyze the circuit in figure 2 to find IDQ, VGSQ and VDS. As given in circuit, the IDSS is8mA but a customer requires current more than this IDSS. Suggest a change in the circuit resistorswithout changing the MOSFET. Prove your suggested circuit by doing load line analysis. Is the Q pointin the new circuit is located at correct location?
- Compute voltage peak of the input. Is it equal to what you are expecting base from the setvalues of your VAC source? - Compute voltage peak of the output. Is it equal to what you are expecting base from the setvalues of your VAC source?
IDSS=8mA , VP =-4VTo help plot the DC load line VGS=VG-IDRSa)Attach a Plot of JFET Characteristic Curve as shown in Figureb)What is the approximate VGSQ?c)What is the approximate IDQ in mA?d)Determine source voltage VS.e)Calculate the drain voltage VD.f)Calculate the drain-to-source voltage VDS.
FOLLOW UP QUESTIONS: BIPOLAR JUNCTION TRANSISTOR (BJT) SOLVE FOR: a.) VCE (off) CONSTRUCT A DC LINE SHOWING THE VALUES OF b.) IC (sat) c.) VCE (off) d.) ICQ e.) VCEQ