I. II. Research on other types: PIN, IMPATT, GUNN, and TUNNEL DIODES Diode Approximations R2 = 1.2 kΩ D₁ Si, rg 2 02, TR = 220 k R₁ D₂ Given: R₁ = 2 k MIES E D₁ 吁 R₂ ww R3 = 6.8 kΩ E 10 V R3 D₂: Si, TB = 50,TR = 560 k Apply each of diode approximations and determine: a. Current through D₁ b. Voltage across D₂ c. Voltage across R3

a. SketchtheoutputvoanddeterminethedcleveloftheoutputforthenetworkofFig.2.49. Repeat part (a) if the ideal diode is replaced by a silicon diode. Repeat parts (a) and (b) if Vm is increased to 200 V, and compare solutions using Eqs. (2.7) and (2.8).

Given the schematic below, assume D1 and D2 are silicon with forward voltages of 0.7V. Find the following (with solutions) a) Conditions required wherein none of the diodes are conducting b) If both diodes are not conduction, what is Vo? Express in terms of Vi c) Plot the overall relationship of Vo and Vi in the coordinate system shown below. Remember, you are to plot the transfer characteristics of the circuit.

Apply each of diode approximations given the following parameters D`:rB= 2 ohms, rR= 220 kilohms: Si, rB = 5 ohms, rR= 560 kilo ohms Determine the current flowing through D1, D2 AND R2, R3, THE VOLTAGE ACROSS R3 SOLVE IN THREE DIODE APRROXIMATIONS

A diode is doped with NA = 1018/cm3 on the p-type side and ND =1019/cm3 on the n-type side. (a)What is the depletion-layer width wdo? (b) What are the values of xp and xn? (c) What is the value of the built-inpotential of the junction?(d) What is the value of EMAX? Use Eq. E(x) = 1 /εs ∫ ρc(x) dxand as shown.

Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? A)Si diodes have lower PIV and wider temperature ranges than Ge diodes. B) Si diodes have lower PIV and narrower temperature ranges than Ge diodes. C) Si diodes have higher PIV and narrower temperature ranges than Ge diodes. D) Ge diodes have lower PIV and smaller temperature ranges than Si diodes.

A practical silicon-based solar cell is constructed from a n+ p junction. a. Explain briefly the meaning of the notation n+ ? b. Draw a sketch showing the device structure of this solar cell. c. This cell shows a photocurrent IL = 10.9 A under AM1.5G illumination.If the temperature is 25oC, what is VOC ? Assume that the saturatedcurrent IS = 1×10-9 A.

DiodesFill in the blanks with the words belowcheck valve, conductance, convert, crystalline, impurities, infinite, galena, p–n junction, rectifying,resistance, selenium, semiconductor, switching circuits, tailored, temperature, threshold, two-terminal,unidirectionalA diode is a 1 ………………… electronic component that conducts current primarily in one direction(asymmetric 2 ………………..); it has low (ideally zero) 3 ……………… in one direction, and high (ideally4 ………………..) resistance in the other. A 5 ………….. diode, the most common type today, is a 6……….. piece of semiconductor material with a 7 ………………. connected to two electrical terminals. Avacuum tube diode has two electrodes, a plate (anode) and a heated cathode. Semiconductor diodes were thefirst semiconductor electronic devices. The discovery of crystals' 8 ……………… abilities was made byGerman physicist Ferdinand Braun in 1874. The first semiconductor diodes, developed around 1906, weremade of mineral crystals such as 9 ……………….. . Today,…

A silicon pn junction has the following doping condition: 10^(16)cm³ at n-type side and 10^(17) cm at p-type side.calculate total depletion width W, widths of depletion regions at p and n sides of the junction.where Vbi=0.754v Emax=0.0000165v/m

A crystal diode having internal resistance rf, = 20ohm is used for half-wave rectification. lf the applied voltage v = 50 sin wt and load resistance RL, = 800ohms find: 1. I m, l dc and I rms 2. a.c. power input and dc power output 3. DC output voltage 4. Efficiency of rectification