A practical silicon-based solar cell is constructed from a n+ p junction. a. Explain briefly the meaning of the notation n+ ? b. Draw a sketch showing the device structure of this solar cell. c. This cell shows a photocurrent IL = 10.9 A under AM1.5G illumination. If the temperature is 25oC, what is VOC ? Assume that the saturated current IS = 1×10-9 A.

A practical silicon-based solar cell is constructed from a n+ p junction. a. Explain briefly the meaning of the notation n+ ? b. Draw a sketch showing the device structure of this solar cell. c. This cell shows a photocurrent IL = 10.9 A under AM1.5G illumination. If the temperature is 25oC, what is VOC ? Assume that the saturated current IS = 1×10-9 A.

EBK ELECTRICAL WIRING RESIDENTIAL

19th Edition

ISBN:9781337516549

Author:Simmons

Publisher:Simmons

Chapter19: Special-purpose Outlets-water Pump, Water Heater

Section19.2: Water Heater Branch Circuit

Problem 8R: For residential water heaters, the Consumer Product Safety Commission suggests a maximum temperature...

See similar textbooks

Similar questions

A practical silicon-based solar cell is constructed from a n+p junction. a) Explain briefly the meaning of the notation n+? b) Draw a sketch showing the device structure of this solar cell. c) This cell shows a photocurrent IL = 10.9 A under AM1.5G illumination. If the temperature is 25 oC, what is VOC? Assume that the saturated current IS = 1×10−9 A.
A crystalline silicon photovoltaic cell has an open circuit voltage of 0.5V and a short circuit current of 1.8 A at Standard Test Conditions. What is the maximum output power at Standard Test Conditions and at a cell temperature of 50oC? What is the percentage decrease in power per oC? Assume a Fill Factor of 0.70 at 25oC. (As a rule of thumb for crystalline silicon solar cells, the increase in short circuit current is about 0.058% per oC while the decrease on open circuit voltage is 0.30% per oC and decrease in the fill factor is by 0.15% per oC).
A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.
Figure Q4 shows the silicon wafer. This silicon has been added with the two elements as listed in Table Q3. Identify the majority charge carrier in each extrinsic silicon wafer and justify your answer with illustrations.
Density of state of copper The Density of state for copper 8.9 gm/cm^3 Q1)Find and explain: a-The fermi level is located at........b-The energy gap = Q2)Choose and explain: a-The boud gap is (small-big)b-This means that copper is a(conductor-semiconductor-)
At what temperature will intrinsic silicon become an insulator, based on the deﬁnitions in Table ? Assume that μn = 1800 cm2/V·s and μp = 700 cm2/V·s.
Calculate the efficiency of a silicon-based solar cell having short circuit current density of Jsc = 42.2 mA/cm2 , open circuit voltage Voc = 706 mV and fill factor FF = 0.828. Remember that the ir
The concentration of donor impurity atoms in silicon is Nd = 1015 cm-3. Assume an electron mobility of u, = 1300 cm?/V-s and a hole mobility of u, = 450 cm2/V-s. (a) Calculate the resistivity of the material. (b) What is the conductivity of the material?
Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? Si diodes have lower PIV and wider temperature ranges than Ge diodes. Ge diodes have lower PIV and smaller temperature ranges than Si diodes. Si diodes have higher PIV and narrower temperature ranges than Ge diodes. Si diodes have lower PIV and narrower temperature ranges than Ge diodes.
1 (a) Suppose in a donor doped semiconductor at a particular temperature, EF is 0.015 eV above than ED level when Ec-ED = 0.045 eV. Comment on whether there will be partial ionization or full ionization in this case. 1 (b) When EF touches intrinsic Fermi energy EFi, comment on whether an extrinsic semiconductor will stay extrinsic or not. What will be ultimate state of semiconductor in this case? Don,t copy from anywhere.
Which of the following ratings (PIV- Peak Inverse Voltage and temperature) is true? A)Si diodes have lower PIV and wider temperature ranges than Ge diodes. B) Si diodes have lower PIV and narrower temperature ranges than Ge diodes. C) Si diodes have higher PIV and narrower temperature ranges than Ge diodes. D) Ge diodes have lower PIV and smaller temperature ranges than Si diodes.
A sample of n-type silicon semiconductor has the following properties:Donor density Ndis 5x1019per cm3Mobility of electron is 1500 Mobility of hole is 500Electron charge q = 1.602x10-19coulombs.Intrinsic carrier density ni= 1.45x1010per cm3a)Find the density of holes and electrons in this sampleb)Find the conductivity of the given sample if the. c)What is the resistivity of the given sample?