Electronic *Soru liçin B(B+1) olarak dikkate alınız. / Consider B( B+1)S1. Silikon BJT için: For Silicon BJT:IB, IC, IE, Vc ve Vε değerlerini bulunuz. / Find IB, Ic, IE, Vc and VE•Çıkış için DC yük doğrusunu çizerek Q noktasını gösteriniz. / Plot the DC load linefor the output characteristics and determine the quiescent point.IB (10p)GewwRB50kQ12VRC5000B=100RE500 A

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Answered: *Soru liçin B(B+1) olarak dikkate…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Using IC that is approximately equal to IE. Determine the value of R1in ohms, when VCC=19V, RC=2178 ohms, RE=327 ohms, VC=7 V and R2=6431ohm
FOLLOW UP QUESTIONS: BIPOLAR JUNCTION TRANSISTOR (BJT) SOLVE FOR: a.) VL(p-p) if Rs is 1KOhm b.) Ais if Rs connected is 1KOhm
silicon is a doped with acceptor atoms to a density of 10^22 m^-3. If it is assumed that all acceptor centers are ionized . Calculate the conductivity of the extrinsic silicon, given that the intrinsic density is The density of acceptor atom is na=1022 m−3na=1022 m-3. The intrinsic density is ni=1.4×1016 m−3ni=1.4×1016 m-3. The mobility of electron is μe=0.16 m−3μe=0.16 m-3. The mobility of holes is μh=0.045 m−3μh=0.045 m-3.
Q6-Assuming that all of the valence electrons contribute to current flow, (a) calculate the mobility of an electron in copper and (b) calculate the average drift velocity for electrons in a 100 cm copper wire when 10 V are applied. Given( The lattice parameter of copper is 3.6151 10", copper is FCC, a = 5.89 x 105)
Compute Rin(tot). Let IGSS = 2pA.
Find the concentration of electrons & holes in (a) N-type Si at 300K, if the conductivity is 300(0.cm)^-1. (b) Also find these values for P-type Si. Given ni=1.5x10^12 /Cm^3, un31200 * .Cm2/V.sec & pp3D400Cm^2/V.sec
Given: EL = 2kV R = 49 Ohms L = 53 mH C = 88.4 uF f = 60 Hz Find: ET = ? IL = ? Z = ?
A pure element is connected across an AC signal. CH1 and CH2 measures the voltage and current respectively: CH1 (Yellow) Settings: CH2 (Blue) Settings: Volts/Div: 50V Current Probe Ratio: 100 mV/mA Time/Div: 5ms Volts/Div: 20V Probe Settings: X1 Time/Div: 5ms Probe Settings: X1 If ?? (distance between two ‘purple’ cursors) is 5ms, determine:a. CH2 Peak Currentb. CH2 RMS Currentc. Impedance of the pure elementd. Type of load. If reactive, indicate the values of inductance or capacitance
as ap q1a
The resistance of copper wire with alpha = 0.00393/Co at 20oC is 129 Ω. At 78 oC, its resistance would be about ___.
A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.
Please provide Handwritten answer. 2. Which of the following has the biggest impact on the adhesion of photoresist on silicon wafer? * A) Surface is clear from contamination B) Smooth surface and flatness of the silicon wafer C) Photoresist primers coating before the photoresist coating D) the silicon wafer is heated at 140 Celcius before the spin coating E) Other:

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