Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph sheet. Now mark +ve X-axis as Vf, -ve X-axis as Vr, +ve Y-axis as Ifand –ve Y-axis as Ir. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si reverse biased condition in third Quadrant.

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  1. Take a graph sheet and divide it into 4 equal parts. Mark origin at the center of the graph sheet.
  2. Now mark +ve X-axis as Vf, -ve X-axis as Vr, +ve Y-axis as Ifand –ve Y-axis as Ir.
  3. Mark the readings tabulated for Si forward biased condition in first Quadrant and Si reverse biased condition in third Quadrant.
 
Fig: V-I Characteristics of PN Junction Diode under
Forward & Reverse Bias Conditions
V.
Ve
Transcribed Image Text:Fig: V-I Characteristics of PN Junction Diode under Forward & Reverse Bias Conditions V. Ve
Forward Bias Condition:
Reverse Bias Condition:
Table 1.3
Forward Voltage
Across the
Diode,
Vr (Volts)
Table 1.4
Forward
Reverse Voltage Reverse Current
Across the
Diode,
Voltage
Current through
the Diode,
Voltage
through the
Diode,
source
source
Ve (Volts)
(mA)
Va (Volts)
Ve (Volts)
k (YA)
0.1
0.100
0.000194
-0.024 yA
-0.222 uA
0.2
0.199
0.001471
1
-1 V
2
-2 V
0.3
0.291
0.008873
-2.999 V
0.4
0.364
0.036
6.
-5.999 V
0.5
0.411
0.089
12
-11.998 V
0.6
0.440
0.160
0.7
0.461
0.239
15
-14.998 V
-1.421 UA
1
0.500
0.500
2
0.555
1.445
6
0.623
5.377
12
0.661
11
15
0.674
14
20
0.689
19
Transcribed Image Text:Forward Bias Condition: Reverse Bias Condition: Table 1.3 Forward Voltage Across the Diode, Vr (Volts) Table 1.4 Forward Reverse Voltage Reverse Current Across the Diode, Voltage Current through the Diode, Voltage through the Diode, source source Ve (Volts) (mA) Va (Volts) Ve (Volts) k (YA) 0.1 0.100 0.000194 -0.024 yA -0.222 uA 0.2 0.199 0.001471 1 -1 V 2 -2 V 0.3 0.291 0.008873 -2.999 V 0.4 0.364 0.036 6. -5.999 V 0.5 0.411 0.089 12 -11.998 V 0.6 0.440 0.160 0.7 0.461 0.239 15 -14.998 V -1.421 UA 1 0.500 0.500 2 0.555 1.445 6 0.623 5.377 12 0.661 11 15 0.674 14 20 0.689 19
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