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th cases, the coolant is a dielectric liquid at 20°C. A heat transfer c of the unfinned package and on all surfaces of the exposed silicon nk includes a 50 x 50 array of nanofins. Determine the maximum a that its temperature is maintained at T, < 75°C for (a) the unfinn

th cases, the coolant is a dielectric liquid at 20°C. A heat transfer c of the unfinned package and on all surfaces of the exposed silicon nk includes a 50 x 50 array of nanofins. Determine the maximum a that its temperature is maintained at T, < 75°C for (a) the unfinn

Principles of Heat Transfer (Activate Learning with these NEW titles from Engineering!)
Principles of Heat Transfer (Activate Learning with these NEW titles from Engineering!)
8th Edition
ISBN:9781305387102
Author:Kreith, Frank; Manglik, Raj M.
Publisher:Kreith, Frank; Manglik, Raj M.
Chapter2: Steady Heat Conduction
Section: Chapter Questions
Problem 2.17P
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 silicon carbide (T ≈ 300 K): k = 490 W/m⋅K 

Silicon carbide nanowires of diameter D = 15 nm can be grown onto a solid silicon carbide surface by carefully depositing droplets of catalyst liquid onto a flat silicon carbide substrate. Silicon carbide nanowires grow upward from the deposited drops, and if the drops are deposited in a pattern, an array of nanowire fins can be grown, forming a silicon carbide nano-heat sink. Consider finned and unfinned electronics packages in which an extremely small, 10 µm x 10 μm electronics device is sandwiched between two d = 100- nm-thick silicon carbide sheets. In both cases, the coolant is a dielectric liquid at 20°C. A heat transfer coefficient of h = 1.0×105 W/m².K exists on the top and bottom of the unfinned package and on all surfaces of the exposed silicon carbide fins, which are each L = 300 nm long. Each nano-heat sink includes a 50 × 50 array of nanofins. Determine the maximum allowable heat rate that can be generated by the electronic device so that its temperature is maintained at T, < 75°C for (a) the unfinned and (b) the finned packages. T., h -W= 10 μm- T., h Th Unfinned (a) 9₁ = (b) 9₂ = i i D Th Nano-finned W W T
Transcribed Image Text:Silicon carbide nanowires of diameter D = 15 nm can be grown onto a solid silicon carbide surface by carefully depositing droplets of catalyst liquid onto a flat silicon carbide substrate. Silicon carbide nanowires grow upward from the deposited drops, and if the drops are deposited in a pattern, an array of nanowire fins can be grown, forming a silicon carbide nano-heat sink. Consider finned and unfinned electronics packages in which an extremely small, 10 µm x 10 μm electronics device is sandwiched between two d = 100- nm-thick silicon carbide sheets. In both cases, the coolant is a dielectric liquid at 20°C. A heat transfer coefficient of h = 1.0×105 W/m².K exists on the top and bottom of the unfinned package and on all surfaces of the exposed silicon carbide fins, which are each L = 300 nm long. Each nano-heat sink includes a 50 × 50 array of nanofins. Determine the maximum allowable heat rate that can be generated by the electronic device so that its temperature is maintained at T, < 75°C for (a) the unfinned and (b) the finned packages. T., h -W= 10 μm- T., h Th Unfinned (a) 9₁ = (b) 9₂ = i i D Th Nano-finned W W T
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