The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C of 100 nF/cm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is V, the magnitude of depletion charge per unit area (in C/cm?) is Vacuum level 4 eV

The band diagram of a p-type semiconductor with a band-gap of 1 eV is shown. Using this semiconductor, a MOS capacitor having VTh of -0.16 V, C of 100 nF/cm2 and a metal work function of 3.87 eV is fabricated. There is no charge within the oxide. If the voltage across the capacitor is V, the magnitude of depletion charge per unit area (in C/cm?) is Vacuum level 4 eV

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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