Q3)1- Why is the photonic devices are considered direct semiconductors? Explain2- Where does the potential barrier get constructed?3- Can we consider an npn transistor as two diodes connected oppositely in series? Why?4- How do we define or assign drain, source and gate for MOSFET?5- Calculate Vbi for Si pn-junction with NA = 10^19 1/cm^3, and ND = 10^12 1/cm^3 atT= 370 Kelvin.

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Answered: 23) 1- Why is the photonic devices are…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

What are the main components that make up a photoresist? 2. What is a two-component resist? What are the two components? 3. What does the concept of dose involve? 4. What effect does the dose have on the molecular weight of a negativeresist? (Does it cause it to decrease or increase?) 5. Identify one problem that can arise when positive resist is applied to athermally grown oxide wafer (silicon substrate). How can this problembe resolved?
Boron gas is used to dope the silicon wafer to a dopant concentration of 10¹6 / cm³. After letting the sample cooldown to 300K (a) What is the new number of free electrons and holes in equilibrium? (b) What type of semiconductor do we have after the process?
How would you compare the carrier recombination lifetime at a metal-semiconductor interface in comparison to the recombination lifetime at the bulk crystal ? And explain a differencin or similarity.
(a) Calculate the indium content of an InGaAs ternary compound semiconductor using a linear approximation, which would have a bandgap of 1.155 eV knowing that a bandgap (EG InAs) of InAs is 0.354 eV and a bandgap (EG GaAs) of GaAs is 1.424 eV. (b) Calculate the effective electron mass of the InGaAs ternary compound semiconductor using a linear approximation with an indium content from question (a). Use a relative electron effective mass of InAs of 0.031 and of GaAs of 0.0665.
Q3) Bring out the advantages and disadvantages of microwave tube devices and semiconductor devices. What are the most common types of microwave diodes and transistors in use give their basic features and applications? What are the most common types of microwave ICs? Give details of the circuit elements and applications
2. We discussed in class how the channel capacitance can be modeled in different region of operations in MOSFETs. For your reference, the slide is shown below. Explain how you think the model would look like if a transistor is in velocity saturation region? Channel Capacitances Channel capacitance is a voltage dependent and non-linear capacitance S C P-sub Bulk Cutoff Region D Operation Region Cutoff Linear Saturation S P-sub Bulk C Linear Region CGBCH CoxWLeff 0 0 1 2 3 S P-sub Bulk Saturation Region CGSCH 0 сат CoxWL eff 1 2 CGDCH 0 CoxWLoft CoxWLoff eff D 0
circuit shown in the figure, Kn = 2mA / V2, VIN = 0.7V for Mi mosfeti. So, what kind of relationship should there be between R1 and R2 resistance for mosfet to work at saturation?
A 100Ω resistor is to be made at room temperature in arectangular silicon bar of 1 cm in length and 1mm 2 in cross sectionalarea by doping it appropriately with phosphorous atoms. If theelectron mobility in silicon at room temperature be 1350 cm 2 /V-second. Calculate the dopant density needed to achieve this. Neglectthe insignificant contribution by the intrinsic carriers.
Deliver a comprehensive overview of semiconductor fabrication processes and elucidate how they impact the performance of microchips.
1- What is the appropriate display type (common anode/common cathode) that must be used with 7447 display decoder?Why?2- We would like to limit the current in the LED segments to 10mA. Assuming that the turn-on voltage for the LED’s is 1.7v, what is the proper value of the resistors to be connected between the 7447 decoder and the 7-segment display?3- Assume that the resistors provided in the lab are 220Ω. What would the current flowing into the LED’s be?4- Design a decade counter circuit using the 7490 counter, the 7447 decoder, and a 7-segment display. Show the pin numbers on the IC’s in your design
In the circuits depicted in Fig., assume ??? = ?0 cos ??, where ?0 is relatively large. Plot ???? as a function of time using a constant-voltage diode model.
Elaborate the following with Scientific Reason a. Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors b. Elaborate the concept and importance of Majority Carriers and Minority Carriers inside P-N Junction c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?

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