The bandgap of GaAs at 50 K is Eg = 1.565 eV and has a linear temperature dependency of -5.41 x 10eV/K. The charge carriers have effective masses me = 0, 066m. mp* = 0, 082m, and m* = 0, 5m, where m.* and m,* are the effective mass of the light electrons and holes, respectively, and mp* corresponds to the effective mass of the heavy holes Hint: (m,)/2 = (mp/2 + (m)/. What is approximately the intrinsic charge carrier concentration at 250 K? Select one: a. 70 ev O b. 3 x 10°m-3 O c. 5 ev d. 6 x 10-22 cm-3 O e. 2 x 10°cm 3

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The bandgap of GAAS at 50 K is E, = 1.565 eV and has a linear temperature dependency of
-5.41 x 10ev/K. The charge carriers have effective masses m = 0,066m.
mp* = 0, 082m, and m =
light electrons and holes, respectively, and mp* corresponds to the effective mass of the heavy holes.
Hint: (m,)/2 = (mp)3/2 + (m,)/.
What is approximately the intrinsic charge carrier concentration at 250 K?
0, 5m., where me* and mp* are the effective mass of the
Select one:
O a. 70 ev
O b. 3 x 10°m3
c. 5 ev
Od. 6 x 10-22cm-3
e. 2 x 10°cm 3
Transcribed Image Text:The bandgap of GAAS at 50 K is E, = 1.565 eV and has a linear temperature dependency of -5.41 x 10ev/K. The charge carriers have effective masses m = 0,066m. mp* = 0, 082m, and m = light electrons and holes, respectively, and mp* corresponds to the effective mass of the heavy holes. Hint: (m,)/2 = (mp)3/2 + (m,)/. What is approximately the intrinsic charge carrier concentration at 250 K? 0, 5m., where me* and mp* are the effective mass of the Select one: O a. 70 ev O b. 3 x 10°m3 c. 5 ev Od. 6 x 10-22cm-3 e. 2 x 10°cm 3
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