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The device is required to have a built-in voltage, Vbi = 0.67 V. The device is to be fabricated by ion implanting phosphorus (P+) ions with an energy of 110 keV into the surface region of a single 300 mm diameter p-type silicon wafer with an acceptor concentration, NA = 8.20 x 10^15 cm–3.     Calculate the phosphorus concentration required in order to produce a pn diode with the desired built-in voltage

The device is required to have a built-in voltage, Vbi = 0.67 V. The device is to be fabricated by ion implanting phosphorus (P+) ions with an energy of 110 keV into the surface region of a single 300 mm diameter p-type silicon wafer with an acceptor concentration, NA = 8.20 x 10^15 cm–3.     Calculate the phosphorus concentration required in order to produce a pn diode with the desired built-in voltage

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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An engineer wishes to produce the pn diode shown in Figure B2. The
device is required to have a built-in voltage, Vbi = 0.67 V.
The device is to be fabricated by ion implanting phosphorus (P+) ions
with an energy of 110 keV into the surface region of a single 300 mm
diameter p-type silicon wafer with an acceptor concentration,
NA = 8.20 x 10^15 cm–3.

 

 

Calculate the phosphorus concentration required in order to produce a
pn diode with the desired built-in voltage.

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