The npn transistor circuit of Figure 1 has VBE = 0.5 V and Bp = 80. Determine the value of R1 that gives Ic = 4 mA and the corresponding value of VCE- Rc 4 ΚΩ R1 C B Vcc Q1 20 V E R2 5 ΚΩ RE 200 2

The npn transistor circuit of Figure 1 has VBE = 0.5 V and Bp = 80. Determine the value of R1 that gives Ic = 4 mA and the corresponding value of VCE- Rc 4 ΚΩ R1 C B Vcc Q1 20 V E R2 5 ΚΩ RE 200 2

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter12: Batteries And Other Sources Of Electricity

Section: Chapter Questions

Problem 3PA: An office building uses a bank of 63 lead-acid cells connected in series with a capacity of 80...

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Photoconductive Cell

Photoconductive cells are light-sensitive resistors in which resistance is inversely proportionated to light intensity when illuminated. These devices consist of a thin single-crystal or polycrystalline film of composite semiconductor materials. Cadmium sulfide (CdS) is used to make the most commercially available photoconductive particles which are sensitive to light in the visible spectrum. Other less commonly used substances respond to infrared light, but not to the visible spectrum. Such substances are lead sulfide (PbS), lead selenide (PbSe), and lead telluride (PbTe), and so on.

Question

The npn transistor circuit of Figure 1 has VBE = 0.5 V and Bp = 80. Determine the value of R1
that gives Ic = 4 mA and the corresponding value of VCE-
Rc
4 ΚΩ
R1
C
B
Vcc
Q1
20 V
E
R2
5 ΚΩ
RE
200 2

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