The steady-state concentration of excess carriers at x = 0 is Sp(0) = n(0) = 2 × 10¹4 cm3 -3 . Assume the following material properties: Hn = 1200 cm²/Vs, Hp = 400 cm²/V s, t, How far inside the semiconductor the excess electrons will go (order of magnitude)? O 0.1 cm 10 cm O 0.001 cm O 1 cm

The steady-state concentration of excess carriers at x = 0 is Sp(0) = n(0) = 2 × 10¹4 cm3 -3 . Assume the following material properties: Hn = 1200 cm²/Vs, Hp = 400 cm²/V s, t, How far inside the semiconductor the excess electrons will go (order of magnitude)? O 0.1 cm 10 cm O 0.001 cm O 1 cm

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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Concept explainers

Z parameter

The Z-parameters that are the impedance parameters of a two-port network are defined by expressing the two-port voltages V1 and V2 in terms of two-port currents I1 and I2. The Z-parameters are calculated by open circuiting one of the two ports at a time henceforth they are called open-circuit impedance parameters.

Question

question 12

The steady-state concentration of excess
carriers at
x = 0
is
8p(0) = n(0) = 2 x 10¹4 cm -3
Assume the following material
properties:
Mn = 1200 cm²/Vs, µp = 400 cm²/Vs, t
How far inside the semiconductor the
excess electrons will go (order of
magnitude)?
0.1 cm
10 cm
0.001 cm
O 1 cm

Consider a bar of a p-type Si that is
uniformly doped with
Na = 2 × 10¹6 cm-3
at 300K. Light is illuminating the left side
of the material as shown in the figure
below.
Light
p type
x=0
x

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