Transistor gain is an integrated circuit device between emitter and collector (hFE) is related to two variables, that can be controlled at the deposition process, emitter drive-in time (x1, in minutes), and emitter dose (x2, in ions x 1014). Fourteen samples were observed following deposition. The table shows the data. 1. Determine if emitter drive-in influences gain in a linear relationship. Test H0: β1=0, where β1 is the slope of the regressor variable. 2. Determine if emitter dose influences gain in a linear relationship. Which regressor variable is the best predictor of gain? 3. Graph the scatter plot of the two regressor variables in separate graphs and draw the regression line. Compare both graphs in terms on the results of a. and b.
Transistor gain is an integrated circuit device between emitter and collector (hFE) is related to two
variables, that can be controlled at the deposition process, emitter drive-in time (x1, in minutes), and
emitter dose (x2, in ions x 1014). Fourteen samples were observed following deposition. The table shows the data.
1. Determine if emitter drive-in influences gain in a linear relationship. Test H0: β1=0,
where β1 is the slope of the regressor variable.
2. Determine if emitter dose influences gain in a linear relationship. Which regressor variable is the
best predictor of gain?
3. Graph the
line. Compare both graphs in terms on the results of a. and b.
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