Unit 4 During tum-on and tum-off of a power transistor, the -Vx current-time and voltage-time relationships are as shown in the adjacent figure. Observe the waveforms 50A and calculate, v. - 372 V 44) the OFF-state power dissipation (static); 45) the switch ON-state power dissipation (static); 46) the average switching loss for the OFF transition (dynamic); 47) the average switching loss for the ON 25us 50 us transition (dynamic); Assume a switching frequency of 1kHz with Vx as specified in Appendix A.

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EID226A
Unit 4
During tum-on and turm-off of a power transistor, the
Vx
current-time and voltage-time relationships are as
shown in the adjacent figure. Observe the waveforms
50A
and calculate,
V. = 372 V
44) the OFF-state power dissipation (static);
45) the switch ON-state power dissipation
(static);
46) the average switching loss for the OFF
transition (dynamic);
47) the average switching loss for the ON
25μs
50us
transition (dynamic);
Assume a switching frequency of 1kHz with Vx as specified in Appendix A.
A SKT40 SCR with thermal impedance characteristic shown below, has rectangular power pulses applied to it.
Consider the power pulses (right), the Zthje
characteristic (below) and calculate,
150
48) the rise in junction temperature from time
100
instant 100ms to the time instant 500ms;
50
49) the rise in junction temperature from time
instant 100ms to the time instant 700ms;
0 100 200 300 400 500 600 700 800 900 t
50) the rise in junction temperature from time
Time in ms
instant 100ms to the time instant 900ms;
PowerinWatt
Transcribed Image Text:EID226A Unit 4 During tum-on and turm-off of a power transistor, the Vx current-time and voltage-time relationships are as shown in the adjacent figure. Observe the waveforms 50A and calculate, V. = 372 V 44) the OFF-state power dissipation (static); 45) the switch ON-state power dissipation (static); 46) the average switching loss for the OFF transition (dynamic); 47) the average switching loss for the ON 25μs 50us transition (dynamic); Assume a switching frequency of 1kHz with Vx as specified in Appendix A. A SKT40 SCR with thermal impedance characteristic shown below, has rectangular power pulses applied to it. Consider the power pulses (right), the Zthje characteristic (below) and calculate, 150 48) the rise in junction temperature from time 100 instant 100ms to the time instant 500ms; 50 49) the rise in junction temperature from time instant 100ms to the time instant 700ms; 0 100 200 300 400 500 600 700 800 900 t 50) the rise in junction temperature from time Time in ms instant 100ms to the time instant 900ms; PowerinWatt
EID226A
SKT 40
Zn
0.8
Zin)p = Zmt + Zthiz
0.6
Zth)z [°C/W]
0.4
sin.
rec.
360°
180°
0,06
0,10
120°
0,09
0,13
90
0,12
0,17
0.2
60°
0,17
0,22
30
0,25
0,35
0,30
0,35
15°
10
102
10-1
102
Transient thermal impedance vs. time
Transcribed Image Text:EID226A SKT 40 Zn 0.8 Zin)p = Zmt + Zthiz 0.6 Zth)z [°C/W] 0.4 sin. rec. 360° 180° 0,06 0,10 120° 0,09 0,13 90 0,12 0,17 0.2 60° 0,17 0,22 30 0,25 0,35 0,30 0,35 15° 10 102 10-1 102 Transient thermal impedance vs. time
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