Using approximate method, the DC operating parameters of the common emitter BJT amplifier are as follows: IEQ = 1.59mA and VCEQ = 15.22 with RB1 = 180K 2, R82 -20K Q, Rc = 2.2K N, +Vcc = +20 V, B of the Si transistor is 250 and ro = infinity. +Vcc RC RB1 + Vo(p-p) +Vi 10 uF ac Ve(p-p) input 10 μF RB2 RE C= 100 uF The output voltage, Vo(p-p) if Vi= 1x10³ sinot (V) is equal to Vpp. -269.12mVpp O -5.26mVpp -2.63mVpp O -134.56mVpp

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Using approximate method, the DC operating parameters of the common emitter BJT
amplifier are as follows: IgQ = 1.59mA and VCEQ = 15.22 with RB1 = 180K 2, R32
-20K N, Rc = 2.2K N, +Vcc = +20 V, ß of the Si transistor is 250 and ro = infinity.
+Vcc
RC
1o
RB1
+ Vo(p-p)
+Vi
10 uF
Vce(p-p)
ac
input
10 uF
RB2
RE
100 uF
Vpp.
The output voltage, Vo(p-p) if Vi= 1x10³ sinot (V) is equal to
-269.12mVpp
O -5.26mVpp
-2.63mVpp
O -134.56mVpp
Transcribed Image Text:Using approximate method, the DC operating parameters of the common emitter BJT amplifier are as follows: IgQ = 1.59mA and VCEQ = 15.22 with RB1 = 180K 2, R32 -20K N, Rc = 2.2K N, +Vcc = +20 V, ß of the Si transistor is 250 and ro = infinity. +Vcc RC 1o RB1 + Vo(p-p) +Vi 10 uF Vce(p-p) ac input 10 uF RB2 RE 100 uF Vpp. The output voltage, Vo(p-p) if Vi= 1x10³ sinot (V) is equal to -269.12mVpp O -5.26mVpp -2.63mVpp O -134.56mVpp
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