Vcc= +5V Vi Vo Rc 1k2 OV 5-201 -o V. 5V RB BC107 v, o W V 10ks2 Calculations and Discussion: 1- For the inverter circuit in the procedure, prove that the transistor is working deeply in saturation when V = 5V. Assume that B = 150 for the BC107 NPN transistor. %3D

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Logic Gates Using NPN Silicon
Transistors
Vcc= +5V
Rc
Vi
V.
1k2
ov 5-201
o V.
RB
5V
V, o
BC107
10k2
Calculations and Discussion:
1- For the inverter circuit in the procedure, prove that the transistor is working deeply in
saturation when V, = 5V. Assume that B = 150 for the BC107 NPN transistor.
Transcribed Image Text:Logic Gates Using NPN Silicon Transistors Vcc= +5V Rc Vi V. 1k2 ov 5-201 o V. RB 5V V, o BC107 10k2 Calculations and Discussion: 1- For the inverter circuit in the procedure, prove that the transistor is working deeply in saturation when V, = 5V. Assume that B = 150 for the BC107 NPN transistor.
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