Advantages And Disadvantages Of Zinc Oxide

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Zinc oxide is a semiconductor material II-VI studied since the middle of 20the century. Most of the physical properties of massive ZnO are therefore well known for several decades. The interest of the researchers then declined, partly because of a major technological lock for the use of ZnO in optoelectronics, namely the impossibility of doping the p-type ZnO.
The ability to grow thin layers and low dimensional hetero structures (quantum wells, nano-columns, etc.) of good crystalline quality recently revitalized the research effort on ZnO, particularly with the aim of obtaining effective devices for optoelectronics in the blue and near ultraviolet, in complement gallium nitride. For this purpose, the main advantage of ZnO GaN is a lower cost, enabled by the relative abundance of zinc over gallium. Zinc oxide powder is also used as an additive in numerous products, for example plastics, ceramics, paints, pigments, cosmetics, etc.
In material science, another major benefit of zinc oxide is its strong exciton binding energy which allows to preserve the exciton properties up to Room temperature. The cohesion energy of the exciton is indeed twice greater in ZnO
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The first is the growth of quantum wells along non-polar axes. These axes, perpendicular to the axis c, make it possible to overcome the internal electric field. The main axes used in growth are axes a and m. The first samples quantum wells of ZnO / (Zn, Mg) O non-polar plan A were grown in 2007 on sapphire substrates [Cha07]. The other axis is to reduce the density of defects crystalline, responsible for non-radiative losses. Most of the centers non-radiative are crystal dislocations, which arise from mesh clash inherent to the heteroepitaxy method. Homoepitaxy, and therefore the use of massive ZnO substrate, theoretically promises a clear improvement in quality crystalline. A significant improvement was observed only very recently
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