“Data storage using Nanotechnology and Electronics” Category: TECHNICAL Authors: A. Aparna and S. Krishna Prasad II year ECE, Gokaraju RangaRaju Institute of Engineering and Technology, Kukatpally, Hyderabad. Contact: Ph 09701540082- Krishna Prasad Email: aparnaalapati@yahoo.co.in krishnaprasad777@gmail.com Abstract: Electronics and nanotechnology working together would yield a holistic solution to data storage problems that are encountered with conventional techniques. This paper aims at familiarizing the reader about some of the available and emerging data storage technologies which are direct consequences of advancement of …show more content…
Writing is accomplished by activating the associated control transistor, draining the cell to write a "0", or sending current into it from a supply line if the new value should be "1". Reading is similar in nature; the transistor is again activated, draining the charge to a sense amplifier. If a pulse of charge is noticed in the amplifier the cell held a charge and thus reads "1", the lack of such a pulse indicates a "0". The 1T-1C storage cell design in an FeRAM is similar in construction to the storage cell in widely used DRAM in that both cell types include one capacitor and one access transistor. In a DRAM cell capacitor a linear dielectric is used whereas in an FeRAM cell capacitor the dielectric structure includes ferroelectric material, typically lead zirconate titanate (PZT). Operationally writing of FeRAM is similar to DRAM. Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Advantages: The key advantage to FeRAM over DRAM is what happens between the
Random Access Memory (RAM) - the storage of data and instructions inside the primary storage is temporary. It disappears from the RAM as soon as the power to the computer is
Emerging nonvolatile memory technologies such as magnetic random access memory (MRAM) and phase change memory (PCM) can be integrated on the top of conventional 2D CMOS at the back-end-of-the-line using low-temperature processing [17], [18]. Hence, these technologies provide high-density nonvolatile storage with very fast access speeds and high bandwidths, which is a key solution to the Von-Neumann bottleneck.
Semiconductor Nano crystals or quantum dots are materials that are typically 2-20 nm in diameter, consisting of approximately twelve to fourteen thousand atoms. The effect of quantum confinement results, in the electrons and holes in the Nano crystal to exhibit quantized energy states; thus enabling them to exhibit novel physical properties that are not found in their bulk counterparts. Research in semiconductor quantum dots started with the realization that the optical and electronic properties of these particles were strongly dependent on particle size, due to quantum confinement of the charge carriers in small spaces.
List and describe at least three types of storage that is typically included in all computer systems.
4. Which of the following answers are true about random-access memory (RAM) as it is normally
Flash memory is a solid-state drive (SSD) that maintains data storage without moving parts, even
There are three types of storage devices. Magnetic storage devices store data as magnetic dots on spinning disks. These dots are written and read by an electromagnet. Examples of magnetic storage devices include Hard Drives (HDD) and Floppy Disks. Optical storage devices store data as coloured dots or small indentations on spinning disks. This data
The use of nano-materials and extreme precision micro-engineering has the potential for great improvement in the world of electronics and information technology by providing smaller, faster, and more powerful computers and this has been at the forefront of the nanotechnology commercialization . Great examples of how nanotechnology is currently being used in these fields are products such as processors, data storage, and memory components made with nano-materials, TVs, monitors and even smartphone screens that use organic light-emitting diodes (OLED), and waterproof electronics such as smartphones due to the application of nano-coatings
4. Which of the following are true about random-access memory (RAM) as it is normally used inside a personal computer?
Which of the following statements about the first slot you fill when you are installing RAM is TRUE?
In order to fix these shortcomings, Mark Kendall and his team have come up with a solution called Nanopatch. The Nanopatch technology is made with
Different types of storage devices are optimal for different situations. Explain what situations are appropriate for the following devices and explain why:
There are several types of semiconductor memory, such as Random Access Memory (RAM), Read Only Memory (ROM), Programmable Read Only Memory (PROM), Erasable Programmable Read Only Memory (EPROM), Electronically Erasable Programmable Read Only Memory (EEPROM) and Flash Memory. There are many types of RAM, such as Static RAM (SRAM), Dynamic RAM (DRAM), Synchronous DRAM (SDRAM) and Double-Data Rate SDRAM (DDR SDRAM). In order to catch up with the increasing speed of processors, the RAM is needed to be
Permanent storage devices are nonvolatile—that is, their contents are persistent and are retained even when power is lost.
We have now discussed the two extremes in electronic materials; a conductor, and an insulator we will now move to a material that lies in between these two, a semiconductor. The