i need the answer quickly Q1: Answer True or False and correct the wrong sentence1. The barrier potential is exactly 0.7 V for silicon.2. The depletion region is very large compared to the n-region and p-region.3. The semiconductor materials are classified into silicon and germanium.4. Adding atoms which have 5 valence electrons makes the silicon more negative.5. The n-region has many free electrons (majority carriers).6. At reverse biases more positive than the PIV, has only a very small reverse saturationcurrent.7. Clippers that have the ability to clip off a portion of the input signal with distorting theremaining part of the waveform.

Since you have posted a question with multiple sub-parts, we will solve the first three sub-parts…

1: Answer True or False and correct the wrong sentence 1. The barrier potential is exactly 0.7 V for silicon. 2. The depletion region is very large compared to the n-region and p-region. 3. The semiconductor materials are classified into silicon and germanium.

1: Answer True or False and correct the wrong sentence 1. The barrier potential is exactly 0.7 V for silicon. 2. The depletion region is very large compared to the n-region and p-region. 3. The semiconductor materials are classified into silicon and germanium.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Similar questions

Q1:- Choose the correct answer: 1- Within the PN-junction, one of the following is not moving: A) majority carriers B) ions C) holes D) free electrons 2- Ionization in the semiconductor PN junction creates a layer on each side of the junction line called the A) junction B) depletion region C) barrier voltage D) forward voltage 3- The depletion layer is created due to A) doping B) diffusion C) barrier potential D) ions 4- Silicone atoms are combined into a shape called A) covalent bond B) crystal C) semiconductor D) valence orbit 5) In N-type semiconductor the majority carriers are A) holes B) dopants C) slower D) electrons 6- The PN-junction material can be used to sense A) magnetism B) temperature C) pressure D) all of the above
A silicon semiconductor is in the shape of a rectangular bar with a crosssectional area of 10 μm × 10 μm, a length of 0.1 cm, and is doped with Arsenic at 5 × 1016 atoms/cm3 concentration. (T = 300 K).a) determine the current if 5 V is applied across the length. b) repeat part (a) if the length is reduced to 0.01 cm. c) calculate the average drift velocity of electrons in parts (a) and (b). (µn=1350 cm2/volt-s)
Explain what will happen to a semiconductor doped by equal concentration of donors and acceptor impurities? *Please provide the answer as in the texbook.TQ.
Silicon is doped with ND= 2 × 1015 impurity atoms/cm3 . Assume the electron and hole mobilities for the given impurity are un = 1320 cm2 / V.s, and up=460 cm2 /V.s respectively. Use ni = 1.5 × 1010/cm3 Calculate the resistivity of silicon. Assume an aluminum line runs diagonally from one corner of a 20 mm × 20 mm silicon material to the other corner. What is the resistance of this line if it is 1 μm thick and 5 μm wide? The resistivity of pure aluminum is 2.82 μΩ-cm.
This problem concerns the following three samples of silicon, each of which has a different doping level: sample a : 6.25×10^15" cm" arsenic sample b: 10^16 cm boron, 5x10^15 cm phosphorous sample c : intrinsic (no doping) Complete the table like that shown below for these three samples. Assume that at room temperature the electron mobility He is 1600 cm /.s, the hole mobility H, is 600 cm2/V.s, and the intrinsic carrier concentration n, is (1/352) x10^10 cm.a- Find the resistivity in (Ω.cm) of sample a. b- Find the conductivity in (Ω.cm)-1 of sample bc- find the resistivity in (Ω.cm) of sample c.
1. Given the circuit below. Answer the following: A. Which diodes turned ON? The diodes are made up of Silicon and the diode internal resistance rD is 1 Ω. B. What is the current (in mA) in the circuit? The diodes are made up of Silicon and the diode internal resistance rD is 1 Ω. C. What is the voltage (in V) across the 100 Ω resistor? The diodes are made up of Silicon and the diode internal resistance rD is 1 Ω.
The velocity of electrons in an intrinsic silicon material is 80 m/s at a certain temperature. The silicon whose length is 5 cm is subjected to an electric field of 10 volts. Determine the mobility of the electrons in the silicon. (unit must use units in the range of centimeters not meters, Volts and seconds - 2 decimal places)
When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at which the space-charge region in the semiconductor starts to appear? Is the metal work function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What is the value of the metal work function?
Apply each of diodeapproximations and determine:a. Current through D1b. Voltage across D2c. Voltage across R3 GIVEN: R1 = 2 kΩ, R2 = 1.2 kΩ, R3 = 6.8 kΩ E= 10 V D1: Si, rB = 2 Ω, rR = 220 kΩ D2: Si, rB = 5 Ω, rR = 560 kΩ DETERMING FIRST IF IT IS A FORWARD BIASED OR REVERSED BIASED THEN, SOLVE IN FIRST APPROXIMATION, SECOND APPROXIMATION AND THIRD APPROXIMATION SHOW THE CIRCUIT DIAGRAM IN EACH APPROXIMATION
Suppose that NA(x) = No exp(−x/L) in a region of silicon extending from x =0 to x = 8μm,where No is a constant. Assume that p(x) = NA(x). Assuming that jp must be zero in thermale quilibrium, show that a built-in electric ﬁeld must exist and ﬁnd its value for L =1 μm and No =1018/cm3.
A Germanium semiconductor at 300k is doped with 2. 5*10^15 cm^-3 arsenic atoms and 1.8*10^15 cm^-3 boron atoms (a) is the semiconductor p-type? Justify your answer. (b) Estimate the electron and hope concentrations at equilibrium. (c) Determine the concentration of boron atoms that must be added so that the hold concentration is increased to 4*10^15 cm^-3.
A sample of silicon have electron concentration 3.2x10^11 m^-3 and L=86 mm, t=10 mm and w=35 mm, when sample is tested by Hall effect, the value of resistance 2.7 K ohm and the Hall coefficient=3.6 m^3/c, is obtained. 1. Which kind of semiconductor that the sample? 2. Determine the value of mobility for the sample in (1).