When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at which the space-charge region in the semiconductor starts to appear? Is the metal work function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What

When a positive bias of 0.5 V is applied to the metal side of a Pt–Si junction, the junction has the capacitance of 0.25 pF. A bias of 1.5 V results in a capacitance of 0.05 pF. The junction area A = 10-5 cm2, and the temperature T = 300 K. The effective electron mass in Si is me* = 0.26 me. (a) Is the semiconductor of p- or n-type? What is the smallest value of the applied voltage at which the space-charge region in the semiconductor starts to appear? Is the metal work function bigger or smaller than the semiconductor’s? (b) What is the doping level of the semiconductor? (c) What

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

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