Show your complete solutions.1.For a JFET self-bias circuit with VDD = 18 V, RG = 1 MQ, RD = 1.5 kN, Rs = 750 n,IDSS = 10 mA and Vp = - 4 V, draw the circuit and determine IDQ, VGSQ and VG.Determine IDQ, VGSQ, VD and VS for the JFET Voltage divider circuit below.2.20 V2.2ka910KAIDss = 10 mAVp = -3.5 V110kA1.1ka

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1. For a JFET self-bias circuit with VDD = 18 V, RG = 1 MQ, RD = 1.5 kN, Rs = 750 N, IDSS = 10 mA and Vp = - 4 V, draw the circuit and determine IDQ, VGSQ and VG. %3D

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question 1: Draw and explain the transistor amplifier, which is usually referred as emitter follower.Also, (i) derive its voltage and current gains by equivalent circuit; (ii) compare its voltage and current gains with other transistor amplifiers. Question 2:(a) Predict the name of the curve drawn between ID and VGS of the JFET and represent the cut off voltage in it. (b) E-MOSFET has ID(on) = 600mA (minimum) at VGS = 9V and VGS(th) = 1 V. Find the drain current for VGS = 6 V. Question 3: (a) State the name of the power amplifier, which has a efficiency as 10% in practical case and also derive and prove its theoretical efficiency is 25%. (b) Explain the role of Q point in power amplifiers based on its location in AC load line.…
In the circuit in the figure IDSS = 12 mA, VP = -8 V, VGSQ = -2.4 V, IDQ = 4.12 mA, Rsig = 10 kΩ, RG = 100 kΩ, RD = 2 kΩ, RS = 470 Ω, RL = 23.7 kΩ and it is known that rd = 20 kΩ. What will be the voltage gain of the circuit? NOTE: The FET output impedance is rd = 20 kΩ and must be taken into account in the calculations.
Since Vcc = 12 V, Vin = 171 mV, RB = 780 kΩ, RC1 = 12 Ω, RC2 = 3 Ω, RE = 470 Ω, RL = 47 Ω and β1 = β2 = 100 in the circuit in the figure, the current flowing through the load resistor RL (IL) find? NOTE-1: VBE1 = VBE2 = 0.7 V will be taken. NOTE-2: Output impedances of transistors (r0) will be neglected.
Since Vcc = 12 V, Vin = 690 mV, RB = 780 kΩ, RC1 = 27.9 Ω, RC2 = 25.4 Ω, RE = 470 Ω, RL = 47 Ω and β1 = β2 = 100 in the circuit in the figure Find the current (IL) flowing through RL? NOTE-1: VBE1 = VBE2 = 0.7 V will be taken. NOTE-2: Output impedances of transistors (r0) will be neglected.
Since Vcc = 12 V, Vin = 721 mV, RB = 780 kohm, RC1 = 14.8 ohm, RC2 = 27.5 ohm, RE = 470 ohm, RL = 47 Q2 and B1 = B2= 100 in the circuit in the figure Find the current (1) flowing through RL? NOTE-1: VBE1 = VBE2 = 0.7 V will be taken. NOTE-2: The output impedances (ro) of the transistors will be neglected.
Since Vcc = 12 V, Vin = 690 mV, RB = 780 kΩ, RC1 = 27.9 Ω, RC2 = 25.4 Ω, RE = 470 Ω, RL = 47 Ω and β1 = β2 = 100 in the circuit in the figure Find the current (IL) flowing through RL? NOTE-1: VBE1 = VBE2 = 0.7 V will be taken. NOTE-2: Output impedances of transistors (r0) will be neglected. a. 16,56 mA b. 23,46 mA c. 8,28 mA d. 17,94 mA e. 20,70 mA f. 13,80 mA g. 26,22 mA h. 11,04 mA
‏( b ) For the Junction Field Effect Transistor ( JFET ) shown in Figure Q1 ( b ) below , given that maximum current Ipss = 10 mA , pinch - off voltage Vp = -5 V , R D= 2 ka , source voltage and resistance are VDD= 12 V and Rs = 5 kn , respectively , solve to determine following (i) The quiescent voltage between the gate and source VGSQ . (ii) The quiescent drain current IDQ
question from book ELECTRONIC CIRCUIT DESIGN : Question No. 2 Analyze the circuit in figure 2 to find IDQ, VGSQ and VDS. As given in circuit, the IDSS is8mA but a customer requires current more than this IDSS. Suggest a change in the circuit resistorswithout changing the MOSFET. Prove your suggested circuit by doing load line analysis. Is the Q pointin the new circuit is located at correct location?
Figure 1 shows a well-known circuit configuration with the bypassed source resistor using an n-channel D-MOSFET with yos = 20µS. (iv) Calculate transconductance, gm and rd. (v) Calculate the input, Zi and output impedance, Zo for the circuit. (vi) Prove that the equation for the no-load Gain, AvNL, for the circuit is as follows: AvNL = -gm (RD X rd / RD + rd) (vii) Calculate the no-load gain AVNL. (viii) Find the value of VoNL if Vi = 30 mV.
Given a voltage divider configuration of a D-MOSFET with IDSS = 12mA, VP = -3V, yos = 35µS, R1 = 91MΩ, RD = 6.8kΩ, RS = 3.3kΩ, VDD = 18V(i) Draw a complete circuit as describe above.(ii) Determine the operating point, IDQ and VGSQ using mathematical approach.(iii) Determine the operating point, IDQ and VGSQ using graphical approach.(iv) Voltage across drain and source terminals, VDS .
Circuit with given BJTa) Calculate VE1, VE2 , VB1, VB2 , IE1 , IE2 values.b) Find the input and output impedance.c) Find the Current gain AND Voltage gain. VBE=0.7 V, VD=0.7 V , VCC=+20V, β=100R1=R2= 7 KohmsMAKE A DETAILED SOLUTION
A common emitter amplifier as shown in Figure Q2 has the following parameters, β = 100, R1= 33K, R2 = 10K, RC = 3K3, RE = 1K, ro =  and VBE = 0.7 V.State all assumptions made.i. Check whether βRE>>10R2 is satisfiedii. Use the appropriate approach of analysis to determine the Quiescent point; IBQ,ICQ and VCEQ.iii. Draw the small signal equivalent circuit. Determine input impedance, Zin, outputimpedance, Zout, and the voltage gain, AV, if RL=20kΩ.