10 ΚΩ M R₁ 10 V 10 ΚΩ Μ R2 + 20 V
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- a. SketchtheoutputvoanddeterminethedcleveloftheoutputforthenetworkofFig.2.49. Repeat part (a) if the ideal diode is replaced by a silicon diode. Repeat parts (a) and (b) if Vm is increased to 200 V, and compare solutions using Eqs. (2.7) and (2.8).n-type silicon wafers with a resistivity of 3.0Ω·cm are needed for integrated circuit fabrication. What donor concentration ND is required in the wafers? Assume NA =0.2. A certain zener diode has a maximum power rating of 300 mW at 40 deg Cand a derating factor of 1.4mW/deg C. Determine the maximum power the zener can dissipate at a temperature of 80 deg C. 3. From the datasheet, a 1N4728A zener diode has a ZZ of 10 0. The datasheet gives VZ = 3.3 V at a test current, IZ, of 76 mA. What is the voltage across the zener terminals when the current is 90 mA? When the current is 45 mA?
- Given a diode current of 6 mA, V T 26 mV, n 1, and I s 1 nA, find the applied voltage V D .A silicon pn junction has the following doping condition: 10^(16)cm³ at n-type side and 10^(17) cm at p-type side.calculate total depletion width W, widths of depletion regions at p and n sides of the junction.where Vbi=0.754v Emax=0.0000165v/mA crystal diode having internal resistance rf, = 20ohm is used for half-wave rectification. lf the applied voltage v = 50 sin wt and load resistance RL, = 800ohms find: 1. I m, l dc and I rms 2. a.c. power input and dc power output 3. DC output voltage 4. Efficiency of rectification
- CP3: A Fally controlled single-phase bridge rectifier is supplied from a 50Hz, 230/100 * V transformer It is supplying a highly inductive load of 10Omega resistance. For a firing angle of 45, determine the rectified voltage and the rectified current.Q16. Scientists have tried to commercialize Li metal anode materials in the past without asuccess. Recently, scientists revisited the Li metal anode and achieved a certain level ofimprovement. Please estimate the theoretical capacity of Li metal (LiLi++ e-).A. 3862 Ah/gB. 3862 mAh/gC. 26.8 Ah/gD. 13400 mAh/gSPECS: For the following circuit, both sources are equal, they supply the input voltage Vin, withfunction Vin = 15 sin (ωt) V, a frequency of 60 Hz.These sources connect to a set of diodes that behave ideally as shown. in the figure. Both resistors R1 and R2 are 2.2 kΩ. CURCUIT: The output voltage VA (observe the pin from which it is measured) as a functionmathematical input voltage Vin. Plot the curves of Vin and VA on different graphs.
- (a) In your understanding explain how energy process occur when electron –hole pair are created and then when they recombine. Illustrate with diagrams. (b) Since the advent of integrated circuit (IC), the electronic industry continues to have various phases in its products. In your understanding kindly explain the four generations of integrated circuit. Show each generation applications.Draw the energy band diagrams, showing Ec, Ev, EF, and Et, for the following; assum ing all impurities are ionized, a) Intrinsic silicon at 300K. b) Silicon doped with 101 7 boron atoms c m - 3 at 300K.Apply each of diode approximations given the following parameters D`:rB= 2 ohms, rR= 220 kilohms: Si, rB = 5 ohms, rR= 560 kilo ohms Determine the current flowing through D1, D2 AND R2, R3, THE VOLTAGE ACROSS R3 SOLVE IN THREE DIODE APRROXIMATIONS