10. The capacitance of a Au-n-GaAs Schottky-barrier diode is given by the relation 1/C² = 1.57x1015 – 2.12×1015 v, where C is expressed in µF and V is in volts. Taking the diode area to be 0.1 cm², calculate the built-in potential, the barrier height, and the dopant con- centration.

10. The capacitance of a Au-n-GaAs Schottky-barrier diode is given by the relation 1/C² = 1.57x1015 – 2.12×1015 v, where C is expressed in µF and V is in volts. Taking the diode area to be 0.1 cm², calculate the built-in potential, the barrier height, and the dopant con- centration.

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 82P: A tightly wound solenoid at 4.0 K is 50 cm long and is constructed from Nb wire of radius 1.5 mm....

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Question

10. The capacitance of a Au-n-GaAs Schottky-barrier diode is given by the relation 1/C² =
1.57x1015 - 2.12×1015 V, where C is expressed in µF and V is in volts. Taking the diode
area to be 0.1 cm?, calculate the built-in potential, the barrier height, and the dopant con-
centration.

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