Estimate the gate capacitance of PMOS transistor (? = 0.36?, ? =0.18?). Gate oxide thickness is 40Å . Relative permittivity of silicon dioxide is 3.9. Vacuumpermittivity ?0 = 8.854 ? 10−12F·?−1. Answer in fF , round off to 4 decimal places. 2. Estimate the gate capacitance of PMOS transistor (W = 0.36u, L =0.18u). Gate oxide thickness is 40Å. Relative permittivity of silicon dioxide is 3.9. Vacuumpermittivity &o= 8.854 x 10-1²F-m-1. Answer in fF, round off to 4 decimal places.

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Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

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Estimate the gate capacitance of PMOS transistor (? = 0.36?, ? =
0.18?). Gate oxide thickness is 40Å . Relative permittivity of silicon dioxide is 3.9. Vacuum
permittivity ?0 = 8.854 ? 10−12F·?−1. Answer in fF , round off to 4 decimal places.

2. Estimate the gate capacitance of PMOS transistor (W = 0.36u, L =
0.18u). Gate oxide thickness is 40Å. Relative permittivity of silicon dioxide is 3.9. Vacuum
permittivity &o= 8.854 x 10-1²F-m-1. Answer in fF, round off to 4 decimal places.

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