3.11 A certain nMOSFET is to be operated at low val- ues of Vps as a voltage-controlled resistance rps- The FET has k' = 50 μA/V², W = 10 μm, L = 1 μm, and V₁ = 1.0 V. (a) Find the range of values of VGs that will cause IDs to vary from 500 to 20 kn. (b) For the range of VGS values of part (a), what is the range of rps values if W is halved? If L is halved? If both W and L are halved? If both W and I are doubled? If W is raised to 50 μm while L is kept constant at 1 μm?

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3. 11
3.11 A certain nMOSFET is to be operated at low val-
ues of Vps as a voltage-controlled resistance rps.
The FET has k' = 50 μA/V2, W = 10 μm, L
1 μm, and V, = 1.0 V.
=
(a) Find the range of values of VGs that will cause
rps to vary from 500 Ω to 20 ΚΩ.
(b) For the range of VGS values of part (a), what
is the range of rps values if W is halved? If L
is halved? If both W and L are halved? If both
W and L are doubled? If Wis raised to 50 μm
while L is kept constant at 1 μm?
Transcribed Image Text:3.11 A certain nMOSFET is to be operated at low val- ues of Vps as a voltage-controlled resistance rps. The FET has k' = 50 μA/V2, W = 10 μm, L 1 μm, and V, = 1.0 V. = (a) Find the range of values of VGs that will cause rps to vary from 500 Ω to 20 ΚΩ. (b) For the range of VGS values of part (a), what is the range of rps values if W is halved? If L is halved? If both W and L are halved? If both W and L are doubled? If Wis raised to 50 μm while L is kept constant at 1 μm?
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