4(A) The transistor in the circuit shown in figure 6 is so biased that the DC collector current Ic is 1 mA and supply Ve is 5V. The network components have the following values Rc= 2 KN, Rs=1.4 KN, RE=100 2, The transistor has specifications, current gain is 100, and assume base spreading resistance is 100 N and VT = 26 mV. The readings were taken on room temperature. Calculate: (i) Voltage gain, (ii) Evaluate the input resistance R; for two cases at a frequency of 10 KHz, a. CE bypass capacitor across Rg is 25 uF, b. Bypass capacitor is removed leaving RE unbypassed. Vcc = +5V Rc R, (2) Vs RE CE

4(A) The transistor in the circuit shown in figure 6 is so biased that the DC collector current Ic is 1 mA and supply Ve is 5V. The network components have the following values Rc= 2 KN, Rs=1.4 KN, RE=100 2, The transistor has specifications, current gain is 100, and assume base spreading resistance is 100 N and VT = 26 mV. The readings were taken on room temperature. Calculate: (i) Voltage gain, (ii) Evaluate the input resistance R; for two cases at a frequency of 10 KHz, a. CE bypass capacitor across Rg is 25 uF, b. Bypass capacitor is removed leaving RE unbypassed. Vcc = +5V Rc R, (2) Vs RE CE

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

4) By drawing the small signal model of the circuit given below, we can determine the total voltage and current gain values of the circuit, without the bypass capacitor on and without the bypass capacitor. Calculate separately for the two cases as it will be in the circuit (connected to the emitter end of the transistor). (β = 100, rS = 600 Ω, R1 = 27 KΩ, R2 = 4.7 KΩ, RC = 3.3 KΩ, RE = 680 Ω, RL= 15 KΩ, VCC = 10 V)
a- In the circuit shown in the figure, VCC = 13.6 V, β = 145 and since the transistor is of silicon type, when VCE = 6.8 V, IC = 5 mACalculate the RC and RB values. Calculate the power consumed by the transistor.b- If RE = 1.2K is connected to the emitter end of the transistor, calculate the VCE, IC, IB currents. Interpret the final state of the circuit.
For the transistor , IS = 2.5 ×10−16 μA, βF = 100, and βR = 5. (a) Label the collector, base, and emitter terminals of the transistor.(b) What is the transistor type? (c) Label the emitterbase and collector-base voltages, VE B and VC B, andthe normal directions for IE , IC, and IB. (d) Find thevalues of IE , IC, IB, VC B, and VE B if I = 300 μA
For the transistor , IS = 6×10−16 μA,αF = 0.985, and αR = 0.25. (a) What type oftransistor is in this circuit? (b) Label the collector, base, and emitter terminals of the transistor.(c) Label the emitter-base and collector-base voltages, and label the normal direction for IE , IC, andIB. (d) Write the simplified form of the transportmodel equations that apply to this particular circuitconfiguration. Write an expression for IE /IC. Writean expression for IE /IB. (e) Find the values of IE ,IC, IB, βF , βR, VE B, and VC B.
In the circuit given in the figure, R₁ = 850kQ, R₂ = 350kQ, Rs = 4kQ, RL = 4kQ,VDD = 10V, VSGQ = 2.084V and transistor parameters VTP = -1.2V,kp = 40μA/V², W/L = 80 andIt is given as λ= 0.05V-¹. a) Find the gm and ro small sign parameters of the transistor.b) Draw the small sign equivalent of the circuit. c) Find the low signal voltage gain of the circuit AV = V0/Vi.
For the transistor , IS = 2.5×10−16 μA,βF = 75, and βR = 1. (a) Label the collector, base and emitter terminals of the transistor. (b) What isthe transistor type? (c) Label the emitter-base andcollector-base voltages, VE B and VC B, and label thenormal directions for IE , IC, and IB. (d) Find thevalues of IE , IC, IB, VC B, and VE B if I = 300 μA
Consider a common emitter amplifier circuit with Rc= 4.7 K Ohm and bypass capacitor of 120uF, calculate: 1.VCC such that Open circuit VCE=10 V, 2.R2 to make VB= 1.75 V given that R1= 47K ohm 3.RE2 to make re'=22 Ohm if RE1=470 Ohm 4.the expected no load gain with bypass capacitor across RE2 please please in 20 minutes
Instruction/s: 1. Draw, Illustrate and label your schematic diagram before solving the problem. 4.) Given a Voltage -divider biased transistor circuit .Assume Beta DC is 100, ,Voltage at Base-emitter junction is 0.7v ,voltage at common collector is +15v, resistor RB1 is 10k ohms, resistor RB2 is 6k ohms, collector resistor is 1.5k ohms ,emitter resistor is 560 ohms. Determine base current ,collector current and voltage collector-emitter junction. These might help as a guide in answering the problem..
Consider a common emitter amplifier circuit with Rc= 4.7 K Ohm and bypass capacitor of 120uF, calculate: 1.VCC such that Open circuit VCE=10 V, 2.R2 to make VB= 1.75 V given that R1= 47K ohm 3.RE2 to make re'=22 Ohm if RE1=470 Ohm 4.the expected no load gain with bypass capacitor across RE2 5.the expected gain with 47K ohm load and with bypass capacitor across RE2 6.the gain with 47K ohm load and no bypass capacitor it a one question please solve it all i do not know how to divided please please in 30 minutes
Answer as quickly as possible. I'll give upvote. Thank you. The circuit shown is a common source amplifier with a current mirror bias. It is given that the NMOS (M1) parameters are μoCox = 3mA/V2, VTH,n = 0.5V and λ = 0.02 and the PMOS (M2 and M3) parameters are μoCox = 1mA/V2 and VTH,p = −0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has λ = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. Find the gm and ro of transistor M1.
For the transistor , IS = 6 × 10−16 μA, βF = 100, and βR = 0.25. (a) Labelthe collector, base, and emitter terminals of thetransistor. (b) What is the transistor type? (c) Labelthe base-emitter and base-collector voltages, VBEand VBC, and the normal directions for IE , IC, andIB. (d) Find the values of IE , IC, IB, VBC, and VBEif I = 175 μA.
If the circuit of problem 2 is configured as a common-emitter amplifier, calculate the resulting voltage and current gain. Assume a load resistor of 1k ohm. Circuit of problem 2: determine the operating point of a universal trasnsistor DC bias cirucit when Vcc=15V, R1=10k ohm, R2=2.2k ohm, Rc=680 ohm, Re=100 ohm. Assume beta (b)=200 and Vbe=0.72V.