= 5. Consider a dielectric mirror that is made up of quarter wave layers of GaAs with n and AlAs with n 2.912, at operating wavelength of around 1500nm. The GaAs-AIAS mirror is inside a vertical cavity surface emitting laser diode operating at 1.5um. The su GaAs with n3 = nsubstrate = 3.382. The light is incident on the mirror from semiconductor that is GaAlAs with an index no = 3.4. Calculate reflecy ith N=5 would be the bandwidth?
= 5. Consider a dielectric mirror that is made up of quarter wave layers of GaAs with n and AlAs with n 2.912, at operating wavelength of around 1500nm. The GaAs-AIAS mirror is inside a vertical cavity surface emitting laser diode operating at 1.5um. The su GaAs with n3 = nsubstrate = 3.382. The light is incident on the mirror from semiconductor that is GaAlAs with an index no = 3.4. Calculate reflecy ith N=5 would be the bandwidth?
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Transcribed Image Text:5. Consider a dielectric mirror that is made up of quarter wave layers of GaAs with nH = 3.382
and AlAs with n = 2.912, at operating wavelength of around 1500nm. The GaAs-AIAs dielectric
mirror is inside a vertical cavity surface emitting laser diode operating at 1.5μm. The substrate is
GaAs with n3 = nsubstrate = 3.382. The light is incident on the mirror from another
semiconductor that is GaAlAs with an index no = 3.4. Calculate reflect
ith N=5 10. What
would be the bandwidth?
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