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5. Now the surface of the silicon on the p-side is illuminated with light as shown above. Assume all incident light is instantly absorbed at the surface, z = -W, and creates an excess minority concentration of An(z =- -W) = 1 × 100 cm³. Calculate the current density in unit of A/em². Answers within 5% error will be considered correct. No answer

5. Now the surface of the silicon on the p-side is illuminated with light as shown above. Assume all incident light is instantly absorbed at the surface, z = -W, and creates an excess minority concentration of An(z =- -W) = 1 × 100 cm³. Calculate the current density in unit of A/em². Answers within 5% error will be considered correct. No answer

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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I need the solution of the question 5 attached. Thanks! 

Note: (16.16 , 6,36e-31 , 5.56e-10, , 4.983-10, 1.62-5, and 1.55 are the WRONG answers)

4. Use this information to answer Question 4-5: Consider a reverse biased pn junction made of silicon as shown below. The doping densities in the p- and n-sides are NA = Np =1 × 1016 cm-3. Carrier lifetimes are T, = T, = 10-6 s Light The reverse bias is large enough to make the minority carrier concentration become zero at the junction. The depletion region width is small enough to be ignored, x, = x, = 0. The quasi-neutral p-type region is short, W = 1 µm « Lm while the quasi-neutral n-type region is long, L = 100 µm > Lp, where L, and Lp are the diffusion lengths of electron in the p-side and hole in the n-side, respectively. First, assume there is no light illumination and calculate the current density in unit of A/cm?. Answers within 5% error will be considered correct. 3.9385e-10 5. Now the surface of the silicon on the p-side is illuminated with light as shown above. Assume all incident light is instantly i absorbed at the surface, x = -W, and creates an excess minority concentration of An(x = -W) = 1 × 1010 cm-3. Calculate the current density in unit of A/cm². Answers within 5% error will be considered correct. No answer
Transcribed Image Text:4. Use this information to answer Question 4-5: Consider a reverse biased pn junction made of silicon as shown below. The doping densities in the p- and n-sides are NA = Np =1 × 1016 cm-3. Carrier lifetimes are T, = T, = 10-6 s Light The reverse bias is large enough to make the minority carrier concentration become zero at the junction. The depletion region width is small enough to be ignored, x, = x, = 0. The quasi-neutral p-type region is short, W = 1 µm « Lm while the quasi-neutral n-type region is long, L = 100 µm > Lp, where L, and Lp are the diffusion lengths of electron in the p-side and hole in the n-side, respectively. First, assume there is no light illumination and calculate the current density in unit of A/cm?. Answers within 5% error will be considered correct. 3.9385e-10 5. Now the surface of the silicon on the p-side is illuminated with light as shown above. Assume all incident light is instantly i absorbed at the surface, x = -W, and creates an excess minority concentration of An(x = -W) = 1 × 1010 cm-3. Calculate the current density in unit of A/cm². Answers within 5% error will be considered correct. No answer
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