The doping concentrations of p-n junction are N, = 5x101 cm and Na1.5x10 cm, and the minority carrier lifetimes are to = 2 x 10" s and Tno = 8x10*s. The electron mobility is 965 cm²/V-s and the holes mobility is 386cm?/V-s and The cross sectional arca is A = 5x 10* cm. Calculate (a) theideal reverse-saturation current due to holes, (b) the ideal reverse-saturationcurrent due to clectrons, (c) the hole concentration at x = x, for Va = 0.8 Vbi(built-in voltage), (d) the electron current at x = x, for V, = 0.8 Vbi-, and (e) theelectron current at x = x, + (1/2) L, (diffusion length) for Va = 0.8 Vbi-

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5x10 cm and Na The doping concentrations of p-n junction are N. 1.5x10 cm, and the minority carrier lifetimes are to = 2 x 10" s and to = 8x 10*s. The electron mobility is 965 em'/V-s and the holes mobility is 386 cm/V-s and The cross sectional arca is A 5x 104 cm. Calculate (a) the ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to clectrons, (c) the hole concentration at x x, for Va = 0.8 Vbi (built-in voltage), (d) the electron current at x = X, for V, 0.8 Vbi-, electron current at x = x, + (1/2) L, (diffusion length) for Va 0.8 Vbi- and (e) the

5x10 cm and Na The doping concentrations of p-n junction are N. 1.5x10 cm, and the minority carrier lifetimes are to = 2 x 10" s and to = 8x 10*s. The electron mobility is 965 em'/V-s and the holes mobility is 386 cm/V-s and The cross sectional arca is A 5x 104 cm. Calculate (a) the ideal reverse-saturation current due to holes, (b) the ideal reverse-saturation current due to clectrons, (c) the hole concentration at x x, for Va = 0.8 Vbi (built-in voltage), (d) the electron current at x = X, for V, 0.8 Vbi-, electron current at x = x, + (1/2) L, (diffusion length) for Va 0.8 Vbi- and (e) the

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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