7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm3. Find n, and po. Draw the energy band diagram indicating the position of the Fermi level. %3D 8. InP is doped with Np = 2.0 x 1015 cm3 and NA = 1014 cm3. Draw the energy band diagram and calculate the location of the Fermi level at room temperature.

7. At 300 K, Silicon is doped with NA = 6.0 x 1016 cm3. Find n, and po. Draw the energy band diagram indicating the position of the Fermi level. %3D 8. InP is doped with Np = 2.0 x 1015 cm3 and NA = 1014 cm3. Draw the energy band diagram and calculate the location of the Fermi level at room temperature.

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter8: Basic Electric Motors

Section: Chapter Questions

Problem 22RQ: What is the unit of measurement for the strength of a...

See similar textbooks

Similar questions

A capacitor uses air as a dielectric and has a capacitance of 3 F. A dielectric material is inserted between the plates without changing the spacing, and the capacitance becomes 15 F. What is the dielectric constant of this material?
How many valence electrons are generally contained in materials used for insulators?
What frequency must be applied to a 33-mH inductor to produce an inductive reactance of 99.526 ?
A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.
Surface barrier diodes have a lower noise figure in high frequencies True False The capacitance of the Varactor diode increases with an increase in reverse bias voltage True False The dark current is a current that will exist with no applied illumination True False The lifetime of LCDs is longer than that of LEDs True False The liquid-crystal display (LCD) has the distinct advantage of having a lower power requirement than the LED (light emitting diodes) True False
4 - The state with energy 57 meV above Fermi energy has an occupancy probability of 0.080. If P is the probability of occupation of a state with energy 0.057 eV below the Fermi level, it is possible to state that: ( ) It is not possible to determine P without knowing the temperature. ( ) P = 0.880( ) P = 0.920( ) P = 0.950( ) P = 0.910
In a certain semiconductor, the Fermi energy lies above the top of the valence band by an amount equal to 3 4 of the band gap. Find the probability that a state at the bottom of the conduction band is occupied if the band gap is 0.300 eV and the temperature is 275K.
A silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.
Draw the energy band diagrams, showing Ec, Ev, EF, and Et, for the following; assum ing all impurities are ionized, a) Intrinsic silicon at 300K. b) Silicon doped with 101 7 boron atoms c m - 3 at 300K.
At the Fermi temperature TF, EF = kTF . When T = TF, what is the probability that a state with energy E = 2EF is occupied?
(A) compute the concentration of electrons and hole in an intrinsic sample of Si at room temperature you may take me = 0.7 mo and mh = mo (b) Determine the position of fermi level under these condition ?
At T=300K, Determine the probability that an energy state is occupied by an electron if the state is above the Fermi level by kT; Determine the probability that the energy state is empty if the state is below the Fermi level by kT;