a) An n-type extrinsic semiconductor is formed by the deliberate addition of a small number of phosphorus (P) donor impurities to an intrinsic silicon (Si) semiconductor sample. Explain why at room temperature this gives rise to a large increase in the concentration of electrons in the conduction band. Your answer should include a sketch of the energy level diagram for the semiconductor as well as a sketch of the atomic bonding arrangement. b) A concentration N of donor impurities is added to an intrinsic semiconductor, hence forming an n-type semiconductor. Assuming that the donor impurities are completely ionised, use the law of mass action and the concept of charge neutrality to show that the concentration n of electrons in the conduction band is given by: ne N₁ + (№² +4n²) 2 where n, is the charge carrier concentration in the intrinsic semiconductor.

a) An n-type extrinsic semiconductor is formed by the deliberate addition of a small number of phosphorus (P) donor impurities to an intrinsic silicon (Si) semiconductor sample. Explain why at room temperature this gives rise to a large increase in the concentration of electrons in the conduction band. Your answer should include a sketch of the energy level diagram for the semiconductor as well as a sketch of the atomic bonding arrangement. b) A concentration N of donor impurities is added to an intrinsic semiconductor, hence forming an n-type semiconductor. Assuming that the donor impurities are completely ionised, use the law of mass action and the concept of charge neutrality to show that the concentration n of electrons in the conduction band is given by: ne N₁ + (№² +4n²) 2 where n, is the charge carrier concentration in the intrinsic semiconductor.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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