Based on the charge neutrality equations, a) Obtain a mathematical expression for the density of free electrons and free gaps, for a doped n-type semiconductor, where there is still a significant residual (and unintended) concentration of acceptors b) Obtain a simplified expression, for the case where this concentration of acceptors tends to zero.

Based on the charge neutrality equations, a) Obtain a mathematical expression for the density of free electrons and free gaps, for a doped n-type semiconductor, where there is still a significant residual (and unintended) concentration of acceptors b) Obtain a simplified expression, for the case where this concentration of acceptors tends to zero.

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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Based on the charge neutrality equations,a) Obtain a mathematical expression for the density of free electrons and free gaps, for a doped n-type semiconductor, where there is still a significant residual (and unintended) concentration of acceptorsb) Obtain a simplified expression, for the case where this concentration of acceptors tends to zero.
The density of free electrons in an arbitrary semiconductor in a given energy band is obtained by considering that there must be an available state in this band and by weighting it with the probability that this state is occupied. a) State the mathematical description of this carrier density, explaining the meaning of each term. b) Considering the conduction band stall, explain why the distribution of carriers as a function of energy is not monotonically increasing (or decreasing) Please explain each step as I'm having trouble in understanding this subject.
A. Why does the conductivity of a semiconductor and some insulators change with impurity content? Compare this with the behaviour of metallic conductors. B. Discuss the location of the Fermi levels of intrinsic and extrinsic (n-type and p-type) semiconductors in low temperature and high temperature ranges. C. Discuss why the structure of the p-n junction is so important to modern technologies that impact our daily life.
Take a diode formed by the junction of two type n and p semiconductors. In the figure below is the diagram of the energy bands of these semiconductors, (remember the concept of fermi energy, and knowing that for a pure semiconductor it is in the middle). Based on the figures below, answer a) What is the possible current direction in the direction from p to n or from n to p? b) Explain why the current flow occurs only in one direction.
(a) Suppose the excess carriers is uniform, what changes does it make to the 'Ambipolar transport equation' for a n-type semiconductor. Explain the equations.
The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
Explain what is meant by the intrinsic regime of a doped semiconductor, and whether this behaviour is seen for all temperatures.
Elaborate the following with Scientific Reason a. Why Intrinsic Semiconductor materials are the bad conductors of electricity? Elaborate the process to make them full conductors b. Elaborate the concept and importance of Majority Carriers and Minority Carriers inside P-N Junction c. Elaborate why Depletion Zone inside P-N Junction is a problematic area? What necessary measurement should be taken to remove the depletion zone?
2. For a semiconductor with a constant mobility ratio b=μn/μp > 1 independent of impurity concentration, find the maximum resistivity ρm in terms of the intrinsic resistivity ρi and the mobility ratio.(HINT: First, express the conductivity as the sum of the contributions of the electrons and holes. The expression will contain both n and p. Eliminate one of them by using the fact that their product is a constant at a given temperature. Next, to obtain the maximum resistivity, take a derivative with respect to the carrier concentration (which you did not eliminate in the previous step). Then obtain the ratio of ρm /ρi. This ratio should be independent of the carrier concentrations.)
There is a p-type semiconductor box. As the voltage at both ends of the box continued to increase, the drift velocity of the holes in the box reached the saturation velocity. After that, if the acceptor doping concentration in this semiconductor box is doubled and the voltage is also doubled, how will the current change in this semiconductor box change? However, it is assumed that the mobility is affected only by impurity scattering. .
A 100Ω resistor is to be made at room temperature in arectangular silicon bar of 1 cm in length and 1mm 2 in cross sectionalarea by doping it appropriately with phosphorous atoms. If theelectron mobility in silicon at room temperature be 1350 cm 2 /V-second. Calculate the dopant density needed to achieve this. Neglectthe insignificant contribution by the intrinsic carriers.
Select ALL statements below that are TRUE. A. In p-type semiconductors, the dopant element typically contains three-valence electrons. B. The critical temperature is the temperature above which the vapor cannot be solidified no matter the applied pressure. C. In the band model, the electrons are assumed to occupy molecular orbitals. D. Conduction bands are closely spaced molecular orbitals with filled electron spaces. E. In the electron sea model, the valence electrons in metals are assumed to be fixed in the lattice points.