9 5. Consider P-type silicon with n; = 1010 cm-³ and NA = 4 × 1014 cm-3.%3D(a) Find the concentrations of electrons and holes at room temperature.(b) Now heat the material until n; = 3 x 1014 cm-3. Find the same concentrations thisnew temperature.

Given ni = 1010 and NA = 4*1014 then find for electron and hole concentrations for p type material ?…

Answered: 5. Consider P-type silicon with n, =…

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Similar questions

The maximum drift velocity of electrons in silicon is 107 cm/s. If the silicon has a charge density of 0.4C/cm3, what is the maximum current density in the material?
Density of state of copper The Density of state for copper 8.9 gm/cm^3 Q1)Find and explain: a-The fermi level is located at........b-The energy gap = Q2)Choose and explain: a-The boud gap is (small-big)b-This means that copper is a(conductor-semiconductor-)
Silicon cylinder of radius r = 1 cm carries a current of 100 mA at roomtemperature.What is the intrinsic carrier (electrons n and holes p) drift speed?
A silicon wafer is doped n=1.0*10^16cm^-3 with Boron .Find answers for temperature T=0K and T=300K respectively.(1) Is this substance a conductor, an insulator or a semiconductor?If it is a conductor, is it P or N?(2) What is the concentration of electrons and holes?(3)Where is the location of Fermi energy? How far is it from the valence band? Draw an energy band diagram.
A silicon sample at room temperature is doped with gallium (Ga) from one side such that Ndoping=38.85x1015e−x/α , α = 0.5 µm, and Ndoping >> ni. Calculate the electric field at x= 1µm.
conducting line on an IC chip is (2.8 mm) long, and has a rectangular cross-section (1x 4 um). A current of (5 mA) produces a voltage drop of (100 mV) across the line. Determine the electron concentration given that the electron mobility is (500 cm²/V.Sec.).
In the neighborhood of a certain semiconductor junction, the volume charge density is given by Py = 750Sech10^6 pi * tanh10^6 pix C/m³. The dielectric constant of the semiconductor material is 10 and the junction area is 2 x 10^-7m². Find; (a) Vo; (b) C; (c) E at the junction.
Given that mu n = 1350 cm/V.S, Mp 480 cm²/V.s and q = 1.6 x 10-19 C A) A potential difference of 2 V is applied across the 2 ends of an n-type piece of silicon of length 10 um . Calculate the velocity of electrons and holes in this material.
Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?
SEMICONDUCTOR DEVICES n-type silicon sample with a donor impurity concentration of 2x1015 cm–3 is converted into p-type by gallium (Ga) diffusion so that resistivity at T= 80 °C is (100/48) Ω.cm. µp (80 °C) =300 cm2/V.s, µn (80 °C) =900 cm2/V.s and ni (80 °C) = 3x1011 cm–3. Calculate the hole concentration after converting into p-type?
Consider a two-dimensional crystal with rectangular shape, dimensions 10 um x 1 um, lattice spacing 0.15 nm (assume square lattice). What is the Fermi level assuming one electron per atom? What is the density of states as a function of electron energy?
3) A hypothetical metal that exhibits ferromagnetic behavior and has (i) a face centered cubic crystal structure (FCC), (ii) an atomic radius of 0.125 nm and (iii) has a saturation flux density of 0.58 Tesla. Determine the number of Bohr Magnetons per atom for this material.

SEE MORE QUESTIONS

Recommended textbooks for you

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

Electricity for Refrigeration, Heating, and Air C…

Mechanical Engineering

ISBN:

9781337399128

Author:

Russell E. Smith

Publisher:

Cengage Learning

Delmar's Standard Textbook Of Electricity

Electrical Engineering

ISBN:

9781337900348

Author:

Stephen L. Herman

Publisher:

Cengage Learning

Electricity for Refrigeration, Heating, and Air C…

Mechanical Engineering

ISBN:

9781337399128

Author:

Russell E. Smith

Publisher:

Cengage Learning

SEE MORE TEXTBOOKS

5. Consider P-type silicon with n, = 100 cm-3 and NA = 4 x 104 cm-3. (a) Find the concentrations of electrons and holes at room temperature. (b) Now heat the material until n, = 3 x 1014 cm-3. Find the same concentrations this new temperature.