b) Calculate the drift velocity of electrons in silicon at room temperature and when the magnitude of the clectric field is 800 v/m and the mobility of electron is 0.35 m/v.s at room temperature. Also, how long does it take an electron to traverse a 30 mm length of crystal?
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Q: ', 3elow the temperature dependence of charge carrier concentrations of intrinsic semiconductors Ge…
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Q: ) The figure below shows the electron and hole concentration in a silicon region. The electron and…
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- What is CEMF?A silicon sample is supporting an electric field of −1500 V/cm, and the mobilities of electrons and holes are 1000 and 400 cm2/V·s, respectively. What are the electron and hole velocities? If p=1017/cm3 and n=103/cm3, what are the electron and hole current densities?We inject electrons into a p-type semiconductor 5 microns long such that the concentration varies linearly from 10E20 cm^-3 to 0 from left to right. If the mobility of the electrons is 500 cm^2/V.s, what is the current density if the electric fields are negligible?
- Silicon cylinder of radius r = 1 cm carries a current of 100 mA at roomtemperature.What is the intrinsic carrier (electrons n and holes p) drift speed?The ability to move holes in a semiconductor at T = 300 K is 500 cm? / V is the voltage given as 26mV. what is the diffusion constant of the holes accordinglyA small concentration of minority carries are injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this moves the minority carriers by a distance of 1 cm in 20 ms. What will be the mobility of the minority carriers?
- Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni at a fixed temperature and what is the principal reason for that? Don,t copy from anywhere.Answer follow question step by step.conducting line on an IC chip is (2.8 mm) long, and has a rectangular cross-section (1x 4 um). A current of (5 mA) produces a voltage drop of (100 mV) across the line. Determine the electron concentration given that the electron mobility is (500 cm²/V.Sec.).The maximum drift velocity of electrons in silicon is 107 cm/s. If the silicon has a charge density of 0.4C/cm3, what is the maximum current density in the material?
- The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ(A) compute the concentration of electrons and hole in an intrinsic sample of Si at room temperature you may take me = 0.7 mo and mh = mo (b) Determine the position of fermi level under these condition ?Consider a two-dimensional crystal with rectangular shape, dimensions 10 um x 1 um, lattice spacing 0.15 nm (assume square lattice). What is the Fermi level assuming one electron per atom? What is the density of states as a function of electron energy?